MTP658G6

MTP658G6 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 1/9 MTP658G6 CYStek Product Specification P-Channel Enhancement Mode MOSFET MTP658G6 BVDSS -30V ID -5.2A RDSON@VGS=-10V , ID=-5A 39mΩ(typ.) RDSON@VGS=-4.5V , ID=-3.7A 61mΩ(typ.) RDSON@VGS=-4V , ID=-3A 69mΩ(typ.) RDSON@VGS=-3V , ID=-1.5A 116mΩ(typ.)

Description

The MTP658G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit

• Simple drive requirement MTP658G6 • Low on-resistance
• Small package outline
• Pb-free lead plating package G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 V Gate-Source V oltage VGS ±20 V Continuous Drain Current @VGS=-4.5V , TA=25 °C (Note 1) ID -5.2 A Continuous Drain Current @ VGS=-4.5V , TA=70 °C (Note 1) ID -4.2 A Pulsed Drain Current (Note 2, 3) IDM -30 A Pd 1.6 W Total Power Dissipation @ TA=25 °C Linear Derating Factor 0.013 W / °C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 78 °C/W Thermal Resistance, Junction-to-Case RθJC 25 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156 /W when mounted on minimum copper pad.℃ 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 2/9 MTP658G6 CYStek Product Specification Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0V , ID=-250μA ΔBVDSS/ΔTj - -0.02 - V/℃ Reference to 25 , I℃ D=-1mA VGS(th) -1 -1.6 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - -1 VDS=-24V , VGS=0V IDSS - - -10 μA VDS=-24V , VGS=0V , Tj=55℃ - 39 50 ID=-5A, VGS=-10V - 61 75 ID=-3.7A, VGS=-4.5V - 69 85 ID=-3A, VGS=-4V *RDS(ON) - 116 150 mΩ ID=-1.5A, VGS=-3V - 6.2 - S VDS=-5V , ID=-4A *GFS - 3.3 - S VDS=-10V , ID=-1.75A Dynamic Ciss - 829 - Coss - 85 - Crss - 69 - pF VDS=-15V , VGS=0, f=1MHz td(ON) - 17 - tr - 12 - td(OFF) - 24 - tf - 12 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω Qg - 10 - Qgs - 2.6 - Qgd - 4.9 - nC VDS=-24V , ID=-5A, VGS=-5V Source Drain Diode *IS - - -2 *ISM - - -8 A *VSD - -0.77 -1.2 V IS=-1.7A,VGS=0V *Trr - 28 - ns Qrr - 22 - nC IS=-1.7A,VGS=0V ,dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 3/9 MTP658G6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 DS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=3V -VGS=4V 10V -VGS=5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-3V VGS=-4.5V VGS=-4V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance RDSON @Tj=25°C: 39mΩ VGS=-10V, ID=-5A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-5A

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 4/9 MTP658G6 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) Pulsed Ta=25°C VDS=-10V VDS=-5V Gate Charge Characteristics 048 1 2 1 6 2 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-5A VDS=-24V VDS=-15V VDS=-5V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C RθJA=78°C/W, VGS=-10V Single Pulse RDS(ON) Limit Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 5/9 MTP658G6 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=10V Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 T A, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with 1 in² pad area Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 6/9 MTP658G6 CYStek Product Specification Reel Dimension

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 7/9 MTP658G6 CYStek Product Specification Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 8/9 MTP658G6 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C400G6 Issued Date : 2012.12.20 Revised Date : Page No. : 9/9 MTP658G6 CYStek Product Specification TSOP-6 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Style: Pin 1. Drain (D) Pin 2. Drain (D) Pin 3. Gate (G) Pin 4. Source (S) Pin 5. Drain (D) Pin 6. Drain (D) Date Code Device Name 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Marking: 658 □□□□ DIM Min. Max. Min. Max. D 0.0748 REF 1.90 REF J 0.0177 REF 0.45 REF d1 0.0374 REF 0.95 REF K 0.0236 REF 0.60 REF d2 0.0374 REF 0.95 REF L 0° 10° 0° 10° F 0.0276 0.0394 0.70 1.00 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.