MTP6405N6

MTP6405N6 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 1/9 MTP6405N6 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTP6405N6 BVDSS -30V ID -6.5A RDSON(MAX)@VGS=-10V , ID=-5A 24mΩ(typ.) RDSON(MAX)@VGS=-4.5V , ID=-4A 34mΩ(typ.)

Description

The MTP6405N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit

• Simple drive requirement MTP6405N6 G：Gate S：Source D：Drain
• Low on-resistance
• Small package outline
• Pb-free lead plating package Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 Gate-Source V oltage VGS ±20 V TC=25 °C -8.2 TC=70 °C -6.6 TA=25 °C (Note 1) -6.5 Continuous Drain Current TA=70 °C (Note 1) ID -5.2 Pulsed Drain Current (Note 2, 3) IDM -30 A TC=25 °C 3.2 TC=70 °C 2.1 TA=25 °C 2 Total Power Dissipation TA=70 °C PD 1.25 W Operating Junction Temperature and Storage Temperature Range Tj, Tstg -55~+150 °C

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 2/9 MTP6405N6 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 39 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62.5 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156 /W when mounted on minimum copper pad.℃ 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA ΔBVDSS/ΔTj - -0.03 - V/℃ Reference to 25 , I℃ D=-250μA VGS(th) -0.8 -1.2 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 VGS=±20V , VDS=0 - - -100 nA VDS=-24V , VGS=0, Tj=25℃ IDSS - - -10 μA VDS=-24V , VGS=0, Tj=55℃ - 24 32 ID=-5A, VGS=-10V *RDS(ON) - 34 45 mΩ ID=-4A, VGS=-4.5V *GFS - 16.6 - S VDS=-5V , ID=-5A Dynamic Ciss - 1316 - Coss - 143 - Crss - 118 - pF VDS=-15V , VGS=0, f=1MHz td(ON) - 14 - tr - 7 - td(OFF) - 50 - tf - 23 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω Qg - 16 - Qgs - 4.9 - Qgd - 5.2 - nC VDS=-15V , ID=-6.5A, VGS=-10V Source-Drain Diode *IS - - -3.5 *ISM - - -14 A *VSD - -0.75 -1 V IS=-1A,VGS=0V *Trr - 23 - ns Qrr - 14 - nC IS=-6.5A,VGS=0V ,dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 3/9 MTP6405N6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 DS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=2.5V -VGS=3V 10V,9V,8V,7V,6V,5V -VGS=4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-3VVGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-5A ID=-4A

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 4/9 MTP6405N6 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) Pulsed Ta=25°C VDS=-10V VDS=-5V Gate Charge Characteristics 048 1 2 1 6 2 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-6.5A VDS=-24V VDS=-15V VDS=-10V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C RθJA=62.5°C/W, VGS=-10V Single Pulse RDS(ON) Limit Maximum Drain Current vs CaseTemperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=-10V, RθJA=32°C/W

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 5/9 MTP6405N6 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TA=25°C θJA=62.5°C/W Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 0 20 40 60 80 100 120 140 160 T A, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with 1 in² pad area Power Derating Curve 0.4 0.8 1.2 1.6 2.4 2.8 3.2 3.6 0 20 40 60 80 100 120 140 160 TC, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5 °C/W

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 6/9 MTP6405N6 CYStek Product Specification Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 7/9 MTP6405N6 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 8/9 MTP6405N6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C386N6 Issued Date : 2013.08.19 Revised Date : 2013.09.06 Page No. : 9/9 MTP6405N6 CYStek Product Specification SOT-26 Dimension Marking: D 2.820 3.020 0.111 0.119 θ 0° 8° 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Drain (D) Pin 2. Drain (D) Pin 3. Gate (G) Pin 4. Source (S) Pin 5. Drain (D) Pin 6. Drain (D) 6405 □□□□ Device Name Date Code