MTP5614G6

MTP5614G6 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 1/9 MTP5614G6 CYStek Product Specification P-Channel Enhancement Mode MOSFET MTP5614G6

Description

The MTP5614G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit

• Simple drive requirement MTP5614G6 • Low on-resistance
• Small package outline G：Gate S：Source D：Drain BVDSS -60V ID -3.5A RDSON@VGS=-10V , ID=-3A 72mΩ(typ.) RDSON@VGS=-4.5V , ID=-2.7A 98mΩ(typ.)
• Pb-free lead plating package Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -60 Gate-Source V oltage VGS ±20 V Continuous Drain Current @VGS=-10V , TA=25 °C (Note 1) ID -3.5 Continuous Drain Current @VGS=-10V , TA=100 °C (Note 1) ID -2.2 Pulsed Drain Current (Note 2, 3) IDM -20 A Pd 1.6 W Total Power Dissipation @ TA=25 °C Linear Derating Factor 0.013 W / °C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 78 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156 /W when mounted on minimum copper pad.℃ 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 2/9 MTP5614G6 CYStek Product Specification Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - V VGS=0V , ID=-250μA ΔBVDSS/ΔTj - 0.4 - V/℃ Reference to 25 , I℃ D=250μA VGS(th) -1 -1.8 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 VDS=-48V , VGS=0V IDSS - - 25 μA VDS=-48V , VGS=0V , Tj=70℃ - 72 95 VGS=-10V , ID=-3A *RDS(ON) - 98 130 mΩ VGS=-4.5V , ID=-2.7A *GFS - 5.8 - S VDS=-5V , ID=-3A Dynamic Ciss - 929 - Coss - 48 - Crss - 33 - pF VDS=-30V , VGS=0V , f=1MHz td(ON) - 10 - tr - 22 - td(OFF) - 27 - tf - 14 - ns VDS=-30V , ID=-1A, VGS=-10V , RG=6Ω Qg - 14 - Qgs - 3 - Qgd - 3.4 - nC VDS=-30V , ID=-3.5A, VGS=-10V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Source Drain Diode Symbol Min. Typ. Max. Unit Test Conditions *IS - - -3.5 *ISM - - -20 A *VSD - -0.78 -1.2 V IS=-2A,VGS=0V *Trr - 12 - ns Qrr - 7 - nC IS=-2A,VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP5614G6 TSOP-6 (Pb-free lead plating package) 3000 pcs / Tape & Reel 5614

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 3/9 MTP5614G6 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=2.5V -VGS=3V -VGS=3.5V -VGS=4V 10V 4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-3V VGS=-3.5V VGS=-4.5V VGS=-4V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-2.7A VGS=-10V, ID=-3A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-3A ID=-2.7A

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 4/9 MTP5614G6 CYStek Product Specification Typical Characteristics (Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) VDS=-10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 1 01 21 41 6 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-3.5A VDS=-48V VDS=-30V VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C RθJA=78°C/W, VGS=-10V Single Pulse RDS(ON) Limit Maximum Drain Current vs JunctionTemperature 0.5 1.5 2.5 3.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 5/9 MTP5614G6 CYStek Product Specification Typical Characteristics (Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=78°C/W

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 6/9 MTP5614G6 CYStek Product Specification Reel Dimension

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 7/9 MTP5614G6 CYStek Product Specification Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 8/9 MTP5614G6 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C733G6 Issued Date : 2012.08.17 Revised Date : 2012.11.21 Page No. : 9/9 MTP5614G6 CYStek Product Specification TSOP-6 Dimension Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. Marking: 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Style: Pin 1. Drain (D) Pin 2. Drain (D) Pin 3. Gate (G) Pin 4. Source (S) Pin 5. Drain (D) Pin 6. Drain (D) 5614 □□□□ Device Name Date Code DIM Min. Max. Min. Max. D 2.820 3.020 0.111 0.119 θ 0° 8° 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.