MTP5210F3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • Pb-free lead plating and RoHS compliant package Symbol Outline MTP5210F3 TO-263 G D S BVDSS -100V ID -34A VGS=-10V , ID=-20A 37mΩ RDSON(TYP) VGS=-4.5V , ID=-18A 42mΩ G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS -100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C, VGS=-10V ID -34 Continuous Drain Current @ TC=100°C, VGS=-10V ID -21 Pulsed Drain Current (Note 1) IDM -130 Avalanche Current IAS -20 A Avalanche Energy @ L=1mH, ID=-20A, RG=25Ω EAS 200 EAR 10 mJ Repetitive Avalanche Energy@ L=0.05mH (Note 2) TC=25°C 100 Power Dissipation PD W TC=100°C 40 Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 2/8 MTP5210F3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.5 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - VGS=0V , ID=-250μA VGS(th) -1.0 -1.9 -3.0 V VDS = VGS, ID=-250μA GFS - 29 - S VDS =-10V , ID=-20A IGSS - - ±100 nA VGS=±20 - - 1 VDS =-80V , VGS =0V IDSS - - 25 μA VDS =-70V , VGS =0V , Tj=125°C - 37 55 VGS =-10V , ID=-20A *RDS(ON) - 42 70 mΩ VGS =-4.5V , ID=-18A Dynamic *Qg - 148 - *Qgs - 26 - *Qgd - 80 - nC ID=-34A, VDS=-50V , VGS=-10V *td(ON) - 70 - *tr - 13 - *td(OFF) - 240 - *tf - 50 - ns VDS=-20V , ID=-1A, VGS=-10V , RG=6Ω Ciss - 8233 - Coss - 234 - Crss - 166 - pF VGS=0V , VDS=-25V , f=1MHz Source-Drain Diode *IS - - -34 *ISM - - -130 A *VSD - -0.85 -1.2 V IF=-20A, VGS=0V *trr - 180 - ns *Qrr - 1.3 - μC IF=-20A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 3/8 MTP5210F3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 120 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V 10V,9V,8V,7V,6V,5V -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=3V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5VVGS=-3V VGS=-10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-20A RDS(ON)@Tj=25°C : 36.6 mΩ -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-20A

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 4/8 MTP5210F3 CYStek Product Specification Typical Characteristics (Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 100000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=-10V Gate Charge Characteristics 0 40 80 120 160 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-34A VDS=-80V VDS=-50V Maximum Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) TC=25°C, Tj=150°C VGS=-10V, θJC=1.5°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) -ID, Maximum Drain Current(A) VGS=-10V, RθJC=1.5°C/W

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 5/8 MTP5210F3 CYStek Product Specification Typical Characteristics (Cont.) Typical Transfer Characteristics 100 120 140 02468 1 0 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Power Derating Curve 100 120 0 25 50 75 100 125 150 175 200 T C, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5°C/W

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 6/8 MTP5210F3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 7/8 MTP5210F3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C563F3 Issued Date : 2012.12.25 Revised Date : Page No. : 8/8 MTP5210F3 CYStek Product Specification TO-263 Dimension *:Typical Inches Millimeters Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Marking : 5210 □□□□ Device Name Date Code E 0.1600 0.1900 4.06 4.83 α1 - - 6° 8° F 0.0450 0.0550 1.14 1.40 α2 - - 6° 8° G 0.0900 0.1100 2.29 2.79 α3 - - 0° 5° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D 123 K L J G H E F 2 α1 I