IRF510 ARTSCHIP | Alldatasheet
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www.artschip.com 1
Description
The devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low R DS(on) z VGS Rated at ±20V z Sillcon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Parallelling TO-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 Maximum Ratings Symbol Characteristic Rating IRF510/512 MTP4N10 Rating MTP4N08 Rating IRF511/513 Unit VDSS Drain to Source Voltage 1 100 80 60 V VDGR Drain to Gate Voltage 1 RGS=20k Ω 100 80 60 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ, Tstg Operating Junction and Storage Temperatures -55 to +150 -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s 275 275 275 ¥ Maximum On-State Characteristics IRF510/511 IRF512/513 MTP4N08/10 RDS(on) Static Drain-to-Source On Resistance 0.60 0.80 0.80 Ω ID Drain Current Continuous at Tc=25¥ Continuous at Tc=100¥ Pulsed 4.0 2.5 3.5 2.0 5.0 3.5 A Maximum Thermal Characteristics R ӨJC Thermal Resistance Junction to Case 6.4 6.4 2.5 ¥/W R ӨJA Thermal Resistance Junction to Ambient 80 80 80 ¥/W PD Total Power Dissipation at Tc=25¥ 20 20 50 W Notes For information concerning connection dregram and package outline, refer to Section 7.
www.artschip.com 2 Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 100 V(BR)DSS Drain Source Breakdown Voltage1 IRF510/512/MTP4N10 MTP4N08 IRF511/513 60 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 100 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current ±500 nA V GS=±20V, VDS=0V On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF510-513 MTP4N08/10 2.0 4.5 V I D=250µA,VDS=VGS ID=1mA, VDS=VGS 0.60 RDS(on) Static Drain-Source On-Resistance 2 IRF510/511 IRF512/513/MTP4N08/4N10 0.80 Ω V GS=10V, ID=2.0A VDS(on) 4.8 V V GS=10V; ID=4.0A Drain-Source On-Voltage 2 MTP4N08/4N10 3.2 V V GS=10V; ID=2.0A; TC=100¥ gfs Forward Transconductance 1.0 S( ) VDS=10V, ID=2.0A Dynamic Characteristics Ciss Input Capacitance 200 pF Coss Output Capacitance 100 pF Crss Reverse Transfer Capacitance 30 pF VDS=25V, VGS=0V F=1.0MHz Switching Characteristics (Tc=25¥, Figure 11,12)3 td(on) Turn-On Delay Time 20 ns tr Rise Time 25 ns td(off) Turn-Off Delay Time 25 ns tf Fall Time 20 ns VDD=50V, ID=2.0A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 7.5 nC V GS=10V, ID=8.0A VDD=40V