MTP4835L3

MTP4835L3 CYSTEKEC | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package Equivalent Circuit Outline Absolute Maximum Ratings (TC=25°C, unless otherwise noted) MTP4835L3 SOT-223 G D S D G：Gate D：Drain S：Source Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 VGS ±25 V Gate-Source V oltage -13 Continuous Drain Current @ VGS=-10V , TC=25°C -9.2 Continuous Drain Current @ VGS=-10V , TC=100°C -10 Continuous Drain Current @ VGS=-10V , TA=25°C ID -8.4 Continuous Drain Current @ VGS=-10V , TA=70°C Pulsed Drain Current *1 IDM -40 IAS -10 A Avalanche Current Avalanche Energy @ L=0.1mH, ID=-10A, RG=25Ω EAS 5 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 2.5 mJ Total Power Dissipation @TA=25℃ 3.3 Pd W Total Power Dissipation @TA=100℃ 1.65 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 2/8 MTP4835L3 CYStek Product Specification Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 45 (Note) °C/W Note : Surface mounted on a 1 in pad of 2 oz. copper, t≤10s; 110°C/W when mounted on minimum copper pad. Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -2.5 V VDS =VGS, ID=-250μA IGSS - - ±100 nA VGS=±25, VDS=0 - - -1 μA VDS =-24V , VGS =0 IDSS - - -25 μA VDS =-24V , VGS =0, TJ=125°C - 21 28 mΩ VGS =-10V , ID=-10A RDS(ON) *1 - 28 35 mΩ VGS =-5V , ID=-7A GFS *1 - 14 - S VDS =-5V , ID=-10A Dynamic Qg(VGS=10V) *1, 2 - 21 - Qgs *1, 2 - 4.5 - Qgd *1, 2 - 5.1 - nC ID=-10A, VDS=-15V , VGS=-10V td(ON) *1, 2 - 8 - tr *1, 2 - 5 - td(OFF) *1, 2 - 24 - tf *1, 2 - 7 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Ciss - 1665 - Coss - 141 - Crss - 116 - pF VGS=0V , VDS=-15V , f=1MHz Source-Drain Diode IS *1 - - -3 ISM *3 - - -12 A VSD *1 - -0.78 -1.2 V IS=-3A, VGS=0V trr - 32 - ns Qrr - 26 - nC IF=-3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 3/8 MTP4835L3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V 10V,9V, 8V, 7V, 6V, 5V -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) -V =2VGS Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-2.5V VGS=-3V VGS=-10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-10A RDS(ON)@Tj=25°C : 21mΩ -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-10A

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 4/8 MTP4835L3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 1ms 100μs 10μs RDS(ON) Limit TA=25°C, Tj=175°, VGS=-10V RθJA=45°C/W, Single Pulse 10ms 100ms Gate Charge Characteristics 0 4 8 1 21 62 02 4 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-10A VDS=-15V VDS=-10V VDS=-5V Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed Ta=25°C Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 TJ, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V,RθJA=45°C/W

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 5/8 MTP4835L3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-5V Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TA=25°C θJA=45°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=45°C/W

Ordering Information

SOT-223 MTBB0P10L3-0-T3-G 2500 pcs / Tape & Reel(Pb-free lead plating and halogen-free package)

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 6/8 MTP4835L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 7/8 MTP4835L3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C830L3 Issued Date : 2013.02.01 Revised Date : Page No. : 8/8 MTP4835L3 CYStek Product Specification SOT-223 Dimension *: Typical Inches Millimeters Inches 3 2 1 F B A C D E G H a1 I Style: Pin 1.Gate 2.Drain 3.Source Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Device Name Date Code 4835 D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.