MTP4435V8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating package Equivalent Circuit Outline

Ordering Information

MTP4435V8-0-T1-G DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel DFN3×3 MTP4435V8 Pin 1 G：Gate S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 2/9 MTP4435V8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 Gate-Source V oltage VGS ±25 V Continuous Drain Current @ TC=25°C, VGS=-10V -40 Continuous Drain Current @ TC=100°C, VGS=-10V -25 Continuous Drain Current @ TA=25°C, VGS=-10V -13 Continuous Drain Current @ TA=70°C, VGS=-10V ID -10.4 Pulsed Drain Current IDM -80 *1 Avalanche Current IAS -13 A Avalanche Energy @ L=0.1mH, ID=-13A, RG=25Ω EAS 8.5 Repetitive Avalanche Energy @ L=0.05mH EAR 2.5 *2 mJ TC=25℃ 29 TC=100℃ 12 TA=25℃ 3.1 *3 Total Power Dissipation TA=70℃ PD 1.9 *3 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 4.2 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 40 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0 IDSS - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-24V , VGS=0, Tj=125°C - 10.3 15 VGS=-10V , ID=-10A RDS(ON) *1 - 15 20 mΩ VGS=-5V , ID=-7A GFS *1 - 20 - S VDS=-5V , ID=-10A Dynamic Ciss - 2994 - Coss - 323 - Crss - 258 - pF VDS=-15V , VGS=0, f=1MHz

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 3/9 MTP4435V8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions tr *1, 2 - 10 - td(OFF) *1, 2 - 44 - tf *1, 2 - 15 - ns VDD=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Qgs *1, 2 - 12 - Qgd *1, 2 - 13 - nC VDS=-15V , ID=-10A, VGS=-10V , Rg - 4 - Ω VGS=15mV , VDS=0, f=1MHz Source-Drain Diode IS *1 - - -3 ISM *3 - - -12 A VSD *1 - - -1.2 V IF=IS, VGS=0V trr - 40 - ns Qrr - 28 - nC IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 4/9 MTP4435V8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) VGS=-3V VGS=-4V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V VGS=-2.5V VGS=-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 S, Source Drain Current(A) -VSD, Source-Drain Voltage(V) VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain-Source On-State Resistance VGS=-10V, ID=-10A RDS(ON)@Tj=25°C : 10.3 mΩ -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-10A

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 5/9 MTP4435V8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), normliz Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed TA=25°C Gate Charge Characteristics 0 8 16 24 32 40 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-10A VDS=-5V VDS=-10V VDS=-15V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain-Source Voltage(V) -ID, Drain Current(A) DC 100ms 10ms 100μs TA=25°C, Tj=150°C, VGS=-10V θJA=40°C/W, Single Pulse 1ms Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V, RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 6/9 MTP4435V8 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TA=25°C θJA=40°C/W Typical Transfer Characteristics 0123456 GS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 7/9 MTP4435V8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 8/9 MTP4435V8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

Spec. No. : C391V8 Issued Date : 2012.09.28 Revised Date : Page No. : 9/9 CYStech Electronics Corp. MTP4435V8 CYStek Product Specification DFN3×3 Dimension Marking: *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Date Code S S S G D D D D 4435