MTP4411M3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Single Drive Requirement
  • Ultra High Speed Switching
  • Pb-free lead plating package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 V Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TA=25°C ID -5 A Continuous Drain Current @ TA=70°C ID -4 A Pulsed Drain Current IDM -20 *1, 3 A Total Power Dissipation (TA=25℃) Pd 1.5 *2 W Linear Derating Factor 0.01 W/°C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board; 250 °C/W when mounted on min. copper pad *3. Pulse width≤300μs, duty cycle≤2% MTP4411M3 SOT-89 D G D S G：Gate S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 2/8 MTP4411M3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 17 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 83.3 (Note) °C/W Note : When mounted on a 1 in pad of 2 oz. copper; 250 °C/W when mounted on min. copper pad Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.4 -2.5 V VDS=VGS, ID=-250μA GFS - 5 - S VDS=-10V , ID=-4A IGSS - - ±100 nA VGS=±20V , VDS=0 - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-20V , VGS=0 (Tj=125°C) - 40 45 ID=-4A, VGS=-10V *RDS(ON) - 58 75 mΩ ID=-3A, VGS=-4.5V Dynamic Ciss - 796 - Coss - 88 - Crss - 71 - pF VDS=-15V , VGS=0, f=1MHz *td(ON) - 6 - *tr - 10 - *td(OFF) - 18 - *tf - 5 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=6Ω *Qg - 11 - *Qgs - 2 - *Qgd - 3 - nC VDS=-15V , ID=-4A, VGS=-10V Source-Drain Diode *IS - - -2.3 *ISM - - -9.2 A *VSD - -0.76 -1.2 V VGS=0V , IS=-1A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP4411M3 SOT-89 (Pb-free lead plating package) 1000 pcs / Tape & Reel 4411

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 3/8 MTP4411M3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=2V --VGS=4V -VGS=3V -VGS=10V -VGS=9V -VGS=5V -VGS=6V -VGS=7V-VGS=8V Brekdown Voltage vs Ambient Temperature -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage (V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10VVGS=-4.5V VGS=-2.5V VGS=-3V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 02468 1 Gate-Source Voltage-VGS(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4A Drain-Source On-State Resistance vs Junction Tempearture -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-10V, ID=-4A

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 4/8 MTP4411M3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Normalized Threshold Voltage vs Junction Tempearture 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th),Normalized Threshold Voltage ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance-(S) VDS=-10V Pulsed Ta=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-15V ID=-4A Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C VGS=-10V, RθJA=83.3°C/W Single Pulse RDS(ON) Limite 10μs 1μs Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=-10V

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 5/8 MTP4411M3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=10V Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJA(t) 4.RθJA=83.3°C/W

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 6/8 MTP4411M3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 7/8 MTP4411M3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C400M3 Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 8/8 MTP4411M3 CYStek Product Specification SOT-89 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. DIM Min. Max. Min. Max. D 0.0906 0.1024 Marking: 4411 □□□□ E F G C B A I D H 321 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 Style: Pin 1. Gate 2. Drain 3. Source Device Name Date Code E 0.0126 0.0205 0.32 0.52 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.