MTP4411AQ8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline SOP-8 MTP4411AQ8 G：Gate S：Source D：Drain

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 2/8 MTP4411AQ8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -30 V Gate-Source V oltage VGS ±20 V Continuous Drain Current (Note 1) ID -5.3 A Pulsed Drain Current (Note 2) IDM -24 A Total Power Dissipation (Note 1) Pd 2.5 W Linear Derating Factor 0.02 W / °C Operating Junction Temperature Tj -55~+150 °C Storage Temperature Tstg -55~+150 °C Note : 1.Surface mounted on FR-4 board, t≤10sec. 2.Pulse width ≤300μs, Duty Cycle≤2% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 25 °C/W Thermal Resistance, Junction-to-ambient, max RθJA 50 (Note ) °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±20V , VDS=0 IDSS - - -1 μA VDS=-30V , VGS=0 - 35 40 ID=-5.3A, VGS=-10V *RDS(ON) - 56 60 mΩ ID=-4.2A, VGS=-4.5V *GFS - 8 - S VDS=-5V , ID=-5.3A Dynamic Ciss - 730 - Coss - 80 - Crss - 68 - pF VDS=-15V , VGS=0, f=1MHz *td(ON) - 9 - *tr - 10 - *td(OFF) - 37 - *tf - 23 - ns VDD=-15V , ID=-1A, VGS=-10V , RG=6Ω, RD=15Ω *Qg - 11.7 - *Qgs - 2.1 - *Qgd - 2.9 - nC VDS=-15V , VGS=-10V , ID=-5.3A Source Drain Diode *VSD - -0.84 -1.2 V VGS=0V , IS=-1.7A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 3/8 MTP4411AQ8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -10V -4.5V VGS=-3V VGS=-2.5V VGS=-3.5V VGS=-4V Brekdown Voltage vs Ambient Temperature -100 -50 0 50 100 150 200 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage(V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.001 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V VGS=-2.5V VGS=-10V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 S, Source Drain Current(A) -VSD, Source-Drain Voltage(V) VGS=0V Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 140 180 220 260 300 340 380 420 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 100 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V, ID=-4.2A VGS=-10V, ID=-5.3A -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-5.3A

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 4/8 MTP4411AQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Threshold Voltage(V) ID=-250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed TA=25°C Gate Charge Characteristics 02468 1 0 1 2 1 4 1 6 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-15V ID=-5.3A Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 -ID, Drain-Source Voltage(V) -ID, Drain Current(A)Operation in this area is limited by RDS(ON) DC 10ms 100ms 1ms 100μs 10μs Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 5/8 MTP4411AQ8 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 6/8 MTP4411AQ8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 7/8 MTP4411AQ8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C386Q8 Issued Date : 2007.06.08 Revised Date : 2013.09.05 Page No. : 8/8 MTP4411AQ8 CYStek Product Specification SOP-8 Dimension *: Typical Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A Date Code Device Name 4411 □□□□ DIM Min. Max. Min. Max. H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.