MTP4151N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Very low level gate drive requirements allowing direct operation in 3V circuits.
  • Compact industrial standard SOT-23 surface mount package.
  • Pb-free package. Equivalent Circuit Outline Absolute Maximum Ratings (Tj=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS -20 Gate-Source V oltage VGS ±8 V Continuous Drain Current @ TA=25°C, VGS=-4.5V -0.83 Continuous Drain Current @ TA=70°C, VGS=-4.5V ID -0.66 Pulsed Drain Current (Note 1) IDM -4 A Maximum Power Dissipation @ TA=25℃ PD 350 mW Thermal Resistance, Junction-to-Ambient Rth,ja 357 °C/W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width≤ 10μs, duty cycle≤2%. MTP4151N3 SOT-23 D G：Gate S G S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 2/ 8 MTP4151N3 CYStek Product Specification Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0V , ID=-250μA VGS(th) -0.5 -0.9 -1.2 V VDS=VGS, ID=-250μA GFS - 0.85 - S VDS=-10V , ID=-200mA IGSS - - ±10 VGS=±8V , VDS=0 - - -1 VDS=-20V , VGS=0 IDSS - - -10 μA VDS=-20V , VGS=0, Tj=55°C - 0.3 0.5 VGS=-4.5V , ID=-350mA - 0.46 0.6 VGS=-2.5V , ID=-300mA *RDS(ON) - 0.67 0.9 Ω VGS=-1.8V , ID=-150mA Dynamic Ciss - 121 - Coss - 36 - Crss - 28 - pF VDS=-10V , VGS=0, f=1MHz *td(ON) - 8 - *tr - 14 - *td(OFF) - 30 - *tf - 35 - ns VDS=-10V , ID=-500mA, VGS=-4.5V , RG=10Ω *Qg - 2.1 - *Qgs - 0.23 - *Qgd - 0.82 - nC VDS=-10V , ID=-830mA, VGS=-4.5V Source-Drain Diode *IS - - -0.83 *ISM - - -4 A *VSD - -0.82 -1.2 V VGS=0V , IS=-350mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP4151N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 4151

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 3/ 8 MTP4151N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.5 1.5 2.5 3.5 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=1.5V -VGS=1V -VGS=2.5V -VGS=2V -VGS=4.5V -VGS=4V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 D, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) -VGS=2.5V -VGS=1.5V -VGS=1.8V -VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 02468 -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-350mA Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-350mA RDS(ON) @ Tj=25°C : 297mΩ

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 4/ 8 MTP4151N3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA Single Pulse Power Rating, Junction to Ambient 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=357°C/W Gate Charge Characteristics Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) ID=-830mA VDS=-10V Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100m 1ms 100μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=357°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 0.2 0.4 0.6 0.8 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-4.5V, RθJA=357°C/W

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 5/ 8 MTP4151N3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current (mA) -VDS=5V Power Derating Curve 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=357°C/W

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 6/ 8 MTP4151N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 7/ 8 MTP4151N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C565N3 Issued Date : 2012.07.27 Revised Date : Page No. : 8/ 8 MTP4151N3 CYStek Product Specification SOT-23 Dimension *: Typical Inches H JKD A L GV C B S Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 4151 H 0.0000 0.0040 0.00 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.