IRF320 ARTSCHIP | Alldatasheet

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IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11 N-Channel Power MOSFETs, 3.0A, 350-400V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low R DS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF320 IRF321 IRF322 IRF323 TO-220AB IRF720 IRF721 IRF722 IRF723 MTP3N35 MTP3N40 Product Summary Part Number V DSS R DS(on) I D at Tc=25¥ ID at Tc=100¥ Case Style IRF320 400V 1.8 Ω 3.0A 2.0A IRF321 350V 1.8 Ω 3.0A 2.0A IRF322 400V 2.5 Ω 2.5A 1.5A IRF323 350V 2.5 Ω 2.5A 1.5A TO-204AA IRF720 400V 1.8 Ω 3.0A 2.0A IRF721 350V 1.8 Ω 3.0A 2.0A IRF722 400V 2.5 Ω 2.5A 1.5A IRF723 350V 2.5 Ω 2.5A 1.5A MTP3N35 350V 1.8 Ω 3.0A 2.0A MTP3N40 400V 1.8 Ω 3.0A 2.0A TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7.

IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11 N-Channel Power MOSFETs, 3.0A, 350-400V www.artschip.com 2 Maximum Ratings Symbol Characteristic Rating IRF320/322 IRF720/722 MTP3N40 Rating IRF321/323 IRF721/723 MTP3N35 Unit VDSS Drain to Source Voltage 2 400 350 V VDGR Drain to Gate Voltage 2 RGS=20k Ω 400 350 V VGS Gate to Source Voltage ±20 ±20 V TJ, Tstg Operating Junction and Storage Temperatures -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s 275 275 ¥ Maximum Thermal Characteristics IRF320-323/ IRF720-723 MTP3N35/3N40 R ӨJC Thermal Resistance, Junction to Case 3.12 1.67 ¥/W R ӨJA Thermal Resistance, Junction to Ambient 30/80 80 ¥/W PD Total Power Dissipation at Tc=25¥ 40 75 W IDM Pulsed Drain Current2 12 12 A Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 400 V(BR)DSS Drain Source Breakdown Voltage 1 IRF320/322/720/722 MTP3N40 IRF321/323/721/723/ MTP3N35 350 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current IRF320-323 IRF720-723/MTP3N35/3N40 ±100 ±500 nA V GS=±20V, VDS=0V

IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11 N-Channel Power MOSFETs, 3.0A, 350-400V www.artschip.com 3 Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF320-323/IRF720-723 MTP3N35/40 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 1.8 2.5 RDS(on) Static Drain-Source On-Resistance 2 IRF320/321/720/721 IRF322/323/722/723 MTP3N35/40 3.3 Ω V GS=10V, ID=1.5A 12 V V GS=10V; ID=3.0A; VDS(on) Drain-Source On-Voltage 2 MTP3N35/40 10 V V GS=10V; ID=1.5A; Tc=100¥ gfs Forward Transconductance 1.0 S( ) V DS=10V, ID=1.5A Dynamic Characteristics Ciss Input Capacitance 500 pF Coss Output Capacitance 100 pF Crss Reverse Transfer Capacitance 40 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=200¥, Figures 1,2)3 td(on) Turn-On Delay Time 40 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 50 ns VDD=200V, ID=1.5A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 15 nC V GS=10V, ID=4.0A VDD=200V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.6 V Is=3.0A; V GS=0V VSD Diode Forward Voltage IRF320/321/720/721 IRF322/323/722/723 1.5 V Is=2.5A; V GS=0V trr Reverse Recovery Time 450 ns I F=3.0A; dIs/dt=100A/µS Notes 2. Pulse test: Pulse width ≤ 60µs, Duty cycle ≤ 1% 3. Switching time measurements performed on LEM TR-58 test equipment.

IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11 N-Channel Power MOSFETs, 3.0A, 350-400V www.artschip.com 6