MTP3LP01N3

MTP3LP01N3 CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 1/ 9 MTP3LP01N3 CYStek Product Specification 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP3LP01N3 ID -230mA 3Ω@-4V 4.6Ω@-2.5V RDSON(typ) 10.9Ω@-1.5V Features

• Ultra high speed switching.
• Low gate charge.
• 2.5V drive.
• Pb-free lead plating and halogen-free package. Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTP3LP01N3 SOT-23 D G：Gate S S：Source G D：Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 2/ 9 MTP3LP01N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 V Gate-Source V oltage VGS ±10 V Continuous Drain Current ID -230 mA Pulsed Drain Current (Note 1) IDM -920 mA Maximum Power Dissipation (Note 2) PD 250 mW Thermal Resistance, Junction-to-Ambient Rth,ja 500 °C/W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width≤ 10μs, duty cycle≤1%. 2. When mounted on a glass epoxy with a dimension of 100mm²×1mm. Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0V , ID=-250μA VGS(th) -0.6 0.9 -1.1 V VDS=-10V , ID=-100μA GFS 100 210 - mS VDS=-10V , ID=-100mA IGSS - - ±1 μA VGS=±8V , VDS=0 - - -1 VDS=-30V , VGS=0 IDSS - - -10 μA VDS=-24V , VGS=0; Tj=125°C - 3 5 VGS=-4V , ID=-100mA - 4.6 8 VGS=-2.5V , ID=-30mA *RDS(ON) - 10.9 18 Ω VGS=-1.5V , ID=-1mA Dynamic Ciss - 35.7 - Coss - 11.9 - Crss - 3.7 - pF VDS=-20V , VGS=0, f=1MHz *td(ON) - 26.4 - *tr - 12.8 - *td(OFF) - 31.5 - *tf - 46.4 - ns VDS=-15V , ID=-100mA, VGS=-4V , RL=150Ω, RG=50Ω *Qg - 0.78 - *Qgs - 0.1 - *Qgd - 0.1 - nC VDS=-10V , ID=-100mA, VGS=-10V Source-Drain Diode *IS - - -230 *ISM - - -920 mA *VSD - 0.83 -1.2 V VGS=0V , IS=-100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 3/ 9 MTP3LP01N3 CYStek Product Specification Typical Characteristics(The minus sign in voltage and current is omitted) Typical Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 00 . 5 11 . 5 2 Drain-Source Voltage ---V DS(V) Drain Current --- I D(A) VGS=1.5V 2.5V 3.5V TA=25°C 4V Typical Transfer Characteristics 100 150 200 0 0.5 1 1.5 2 2.5 3 Gate-Source Voltage-VGS(V) Drain Current -I D(A) VDS=10V 75°C 25°C 125°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-R DS(ON)(Ω) TA=75°C TA=125°C TA=25°C ID=30mA Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-R DS(ON)(Ω) TA=75°C TA=125°C TA=25°C ID=50mA Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 Drain Current-I D(mA) Static Drain-Source On-State Resistance- RDS(on)(Ω) TA=125°C TA=75°C TA=25°C VGS=1.5V Static Drain-Source On-State resistance vs Drain Current 100 1 10 100 Drain Current-I D(mA) Static Drain-Source On-State Resistance- RDS(on)(Ω) TA=75°C TA=25°C TA=125°C VGS=2.5V

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 4/ 9 MTP3LP01N3 CYStek Product Specification Typical Characteristics(Cont.) Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 Drain Current-ID(mA) Static Drain-Source On-State Resistance- RDS(on)(Ω) TA=125°CTA=75°C TA=25°C VGS=4V Static Drain-Source On-State resistance vs Ambient Temperature 0 50 100 150 Ambient Temperature-T A(°C) Static Drain-Source On-State Resistance-R DS(on)(Ω) ID=50mA, VGS=4V ID=30mA, VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0.1 1 10 100 1000 Reverse Drain Current -I DR(mA) Source-Drain Voltage-V SD(V) TA=125°C TA=25°C TA=75°C VGS=0V Capacitance vs Drain-to-Source Voltage 100 0 5 10 15 20 25 30 Drain-Source Voltage -V DS(V) Capacitance---(pF) Coss Ciss Crss f=1MHz Forward Transfer Admittance vs Drain Current 100 1000 10 100 1000 Drain Current-I D(mA) Forward Transfer Admittance---GFS(mS) TA=125°C TA=25°C TA=75°C Brekdown Voltage vs Ambient Temperature -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 5/ 9 MTP3LP01N3 CYStek Product Specification Typical Characteristics(Cont.) Static Drain-Source On-resistance vs Ambient Temperature -100 -50 0 50 100 150 200 Ambient Temperature-Ta(°C) Static Drain-Source On-state Resistance-R DS(on)(Ω) ID=100mA, VGS=4V Gate Charge Characteristics Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) VDS=10V, ID=100mA Power Derating Curves 100 150 200 250 300 0 50 100 150 200 Ambient Temperature---T A(℃) Power Dissipation---PD(mW) Maximum Safe Operating Area 0.0001 0.001 0.01 0.1 0.001 0.01 0.1 1 10 100 Drain-Source Voltage -VDS(V) Drain Current --- ID(A) DC 10ms 100ms 1ms PW<100μs Single pulse Tc=25°C; Tj=150°C implemented on a glass epoxy

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 6/ 9 MTP3LP01N3 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJA(t), Normalized Transient Thermal Resistance Single Pulse ZθJA(t)=500°C/W max. Implemented on a glass epoxy Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 7/ 9 MTP3LP01N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 8/ 9 MTP3LP01N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 9/ 9 MTP3LP01N3 CYStek Product Specification SOT-23 Dimension *: Typical DIM Marking: TE Date Code AB XX Device Name Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Inches Millimeters Inches Millimeters Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.