MTP3401N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • VDS=-30V RDS(ON)=65mΩ@VGS=-4.5V, IDS=-4A RDS(ON)=120mΩ@VGS=-2.5V, IDS=-1A
  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • Low gate charge
  • Compact and low profile SOT-23 package
  • Pb-free & Halogen-free package Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 V Gate-Source V oltage VGS ±12 V Continuous Drain Current @TA=25°C (Note 1) ID -4.2 A Continuous Drain Current @TA=70°C (Note 1) ID -3.5 A Pulsed Drain Current (Note 2) IDM -30 A Maximum Power Dissipation PD 1.38 W Linear Derating Factor 0.01 W/°C Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. 2. Pulse width limited by maximum junction temperature. MTP3401N3 SOT-23 D S G：Gate G S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 2/8 MTP3401N3 CYStek Product Specification Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient Rth,ja 90 °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250µA VGS(th) -0.7 - -1.3 V VDS=VGS, ID=-250µA IGSS - - ±100 nA VGS=±12V , VDS=0 IDSS - - -1 µA VDS=-24V , VGS=0 IDSS - - -5 µA VDS=-24V , VGS=0, Tj=55°C - - 60 ID=-4.2A, VGS=-10V - - 65 ID=-4.0A, VGS=-4.5V *RDS(ON) - - 120 mΩ ID=-1.0A, VGS=-2.5V *GFS - 11 - S VDS=-5V , ID=-5A Dynamic Ciss - 954 - Coss - 115 - Crss - 77 - pF VDS=-15V , VGS=0, f=1MHz *td(ON) - 6.3 - *tr - 3.2 - *td(OFF) - 38.2 - *tf - 12 - ns VDS=-15V , VGS=-10V , RL=3.6Ω, RG=6Ω *Qg - 9.4 - *Qgs - 2 - *Qgd - 3 - nC VDS=-15V , ID=-4A, VGS=-4.5V , Rg - 6 - Ω f=1.0MHz Source-Drain Diode *ISD - - -2.2 A VD=VG=0, VS=-1.0V *VSD - - -1.0 V VGS=0V , ISD=-1.0A *trr - 20.2 - ns *Qrr - 11.2 - nC IS=-4A, VGS=0V , dI/dt=100A/µs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP3401N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 3401

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 3/8 MTP3401N3 CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 4/8 MTP3401N3 CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 5/8 MTP3401N3 CYStek Product Specification Characteristic Curves(Cont.) 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) Power Dissipation---PD(W) Fig. 12 Power Derating Curve

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 6/8 MTP3401N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 7/8 MTP3401N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C388N3 Issued Date : 2007.06.13 Revised Date :2008.12.17 Page No. : 8/8 MTP3401N3 CYStek Product Specification SOT-23 Dimension *: Typical DIM Inches H JKD A L GV C B S Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 3401 Millimeters Inches Millimeters H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.