IRF420 ARTSCHIP | Alldatasheet

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3.0A, 450V/500V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low R DS(on) z V GS Rated at ±20V z Silicon Gate for Fast Switching Speeds z I DSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF420 IRF421 IRF422 IRF423 TO-220AB IRF820 IRF821 IRF822 IRF823 MTP2N45 MTP2N50 Product Summary Part Number V DSS R DS(on) I D at Tc=25¥ ID at Tc=100¥ Case Style IRF420 500V 3.0 Ω 2.5A 1.5A IRF421 450V 3.0 Ω 2.5A 1.5A IRF422 500V 4.0 Ω 2.0A 1.0A IRF423 450V 4.0 Ω 2.0A 1.0A TO-204AA IRF820 500V 3.0 Ω 2.5A 1.5A IRF821 450V 3.0 Ω 2.5A 1.5A IRF822 500V 4.0 Ω 2.0A 1.0A IRF823 450V 4.0 Ω 2.0A 1.0A MTP2N45 450V 4.0 Ω 3.0A 2.0A MTP2N50 500V 4.0 Ω 3.0A 2.0A TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7.

3.0A, 450V/500V www.artschip.com 2 Maximum Ratings Symbol Characteristic Rating IRF420/422 IRF820/822 MTP2N50 Rating IRF421/423 IRF821/823 MTP2N45 Unit VDSS Drain to Source Voltage 1 500 450 V VDGR Drain to Gate Voltage 1 RGS=20kΩ 500 450 V VGS Gate to Source Voltage ±20 ±20 V TJ, Tstg Operating Junction and Storage Temperatures -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s 275 275 ¥ Maximum Thermal Characteristics IRF420-423/ IRF820-823 MTP2N45/2N50 RӨJC Thermal Resistance, Junction to Case 3.12 1.67 ¥/W RӨJA Thermal Resistance, Junction to Ambient 30/80 80 ¥/W PD Total Power Dissipation at Tc=25¥ 40 75 W IDM Pulsed Drain Current 2 10 10 A Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 500 V(BR)DSS Drain Source Breakdown Voltage 1 IRF420/422/820/822 MTP2N50 IRF421/423/821/823/ MTP2N45 450 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ ±100 IGSS Gate-Body Leakage Current IRF420-423 IRF820-823/MTP2N45/50 ±500 nA V GS=±20V, VDS=0V

3.0A, 450V/500V www.artschip.com 3 Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF420-423/IRF820-823 MTP2N45/MTP2N50 2.0 4.5 V I D=250µA, VDS=VGS ID=1.0mA, VDS=VGS 3.0 4.0 RDS(on) Static Drain-Source On-Resistance 2 IRF420/421/820/821 IRF422/423/822/823 MTP2N45/50 4.0 Ω V GS=10V, ID=1.0A VDS(on) Drain-Source On-Voltage2 MTP2N45/50 V V V GS=10V; ID=2.0A VGS=10V; ID=1.0A Tc=100¥ gfs Forward Transconductance 1.0 S( ) VDS=10V, ID=1.0A Dynamic Characteristics Ciss Input Capacitance 400 pF Coss Output Capacitance 100 pF Crss Reverse Transfer Capacitance 40 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25¥, Figure 1,2)3 td(on) Turn-On Delay Time 40 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 60 ns tf Fall Time 60 ns VDD=250V, ID=1.0A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 15 nC V GS=10V, ID=3.0A VDD=200V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.4 V Is=2.5A; V GS=0V VSD Diode Forward Voltage 1.3 V Is=2.0A; V GS=0V trr Reverse Recovery Time 600 ns Is=2.5A; dIs/dt=100A/µS Notes 2. Pulse width limited by T J 3. Switching time measurements per formed on LEM TR-58 test equrpment.