MTP2N40

IRF710 ARTSCHIP | Alldatasheet

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Technical content

IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits. z Low R DS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-220AB IRF711 IRF712 IRF713 MTP2N35 MTP2N40 Maximum Ratings Symbol Characteristic Rating IRF710/712 MTP2N40 Rating IRF711/713 MTP2N35 Unit VDSS Drain to Source Voltage 1 400 350 V VDGR Drain to Gate Voltage 1 RGS=20k Ω 400 350 V VGS Gate to Source Voltage ±20 ±20 V TJ,Tsgt Operating Junction and Storage Temperatures -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5 s 275 275 ¥ Maximum On-State Characteristics IRF710-711 IRF712-713 NTP2N35/40 Unit RDS(on) Static Drain-to-Source On Resistance 3.6 5.0 5.0 Ω ID Drain Current Continuous at Tc=25¥ Continuous at Tc=100¥ Pulsed 1.5 1.0 6.0 1.4 0.9 5.0 1.3 0.8 5.0 A Maximum On-State Characteristics R ӨJC Thermal Resistance Junction to Case 6.4 6.4 2.5 ¥/W R ӨJA Thermal Resistance, Junction to Ambient 80 80 80 ¥/W PD Total Power Dissipation at Tc=25¥ 20 20 50 W Notes For information concerning connection diagram and package outline, refer to Section 7.

IRF710-713 / MTP2N35 / 2N40 N-Channel Power MOSFETs, 2.25 A, 350-400V www.artschip.com 2 Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 400 V(BR)DSS Drain Source Breakdown Voltage 1 IRF710/712/MTP2N40 IRF711/713/MTP2N35 350 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current ±500 µA V GS=±20V, VDS=0V On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF710-713 MTP2N35/2N40 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 3.6 RDS(on) Static Drain-Source On-Resistance 2 IRF710/711 IRF712/713/MTP2N35/40 5.0 Ω V GS=10V, ID=0.8A 13 V V GS=10V, ID=2.0A VDS(on) Drain-Source On-Voltage2 MTP2N35/2N40 10 V V GS=10V, ID=1.0A, TC=100¥ gfs Forward Transconductance 0.5 S( ) V DS=10V, ID=0.8A Dynamic Characteristics Ciss Input Capacitance 200 pF Coss Output Capacitance 50 pF Crss Reverse Transfer Capacitance 15 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25¥, Figure 11,12)3 td(on) Turn-On Delay Time 10 ns tr Rise Time 20 ns td(off) Turn-Off Delay Time 10 ns tf Fall Time 15 ns VDD=200V, ID=0.8A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 7.5 nC V GS=10V, ID=2.0A VDD=200V Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted) Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.6 V VSD Diode Forward Voltage IRF710/711 IRF712/713 1.5 V IS=1.5A; V GS=0V IS=1.3A; VGS=0V trr Reverse Recovery Time 380 ns Is=1.5A; dl s/dt=25A/µS Notes 2. Pulse test: Pulse width ≤ 80µs, Duty cycle ≤1% 3. Switching time measurements performed on LEM TR-58 test equipment.