MTP2N20

IRF610 ARTSCHIP | Alldatasheet

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Technical content

3.5A,150-220V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low R DS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-220AB IRF610 IRF611 IRF612 IRF613 MTP2N18 MTP2N20 Maximum Ratings Symbol Characteristic Ratings IRF610/612 MTP2N20 Rating MTP2N18 Rating IRF611/613 Unit VDSS Drain to Source Voltage1 200 180 150 V VDGR Drain to Gate Voltage1 RGS=20kΩ 200 180 150 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ, Tstg Operating Junction and Storage Tem perature -55 to +150 -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5S 275 275 275 ¥ Maximum On-State Characteristics IRF610/611 MTP2M18/20 IRF612/613 RDS(on) Static Drain-to-Source On Resistance 1.5 1.8 2.4 Ω ID Drain Current Continuous at Tc=25 ¥ Continuous at Tc=100 ¥ P u l s e d 2.5 1.5 3.25 2.25 9.0 2.0 1.25 8.0 A Maximum Thermal Characteristics R ӨJC Thermal Resistance Junction to Case 6.4 2.5 6.4 ¥/W R ӨJA Thermal Resistance, Junction to Ambient 80 80 80 ¥/W PD Total Power Dissipation At Tc=25¥ 20 50 20 W Notes For information concerning connection diagram and package outline, refer to Section 7.

3.5A,150-220V www.artschip.com 2 Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions2 Off Characteristics 200 180 V(BR)DSS Drain Source Breakdown Voltage1 IRF610/612/MTP2N20 MTP2N16 IRF611/613 150 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current ±500 nA V GS=±20V, VDS=0V On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF610-613 MTP2N18/20 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 1.5 2.4 RDS(on) Static Drain-Source On-Resistance 2 IRF610/611 IRF612/613 MTP2N18/20 1.8 Ω V GS=10V, ID=1.25A ID=1.0A 4.4 V V GS=10V; ID=2.0A VDS(on) Drain-Source On-Voltage 2 MTP2N18/2N20 3.6 V V GS=10V; ID=1.0A; TC=100 gfs Forward Transconductance 0.8 S( ) V DS=10V, ID=1.25A Dynamic Characteristics Ciss Input Capacitance 200 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 25 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25¥, Figures 11,12)3 td(on) Turn-On Delay Time 15 ns tr Rise Time 25 ns td(off) Turn-Off Delay Time 15 ns tf Fall Time 15 ns VDD=50V, ID=1.25A VGS=10V, RGEN=50Ω RGS=50Ω Qg Total Gate Charge 7.5 nC V GS=10V, ID=3.0A VDD=45V Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted) Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics Diode Forward Voltage IRF610/611 2.0 V I S=2.5A; VGS=0V VSD IRF612/613 1.8 V I S=2.0A; VGS=0V trr Reverse Recovery Time 290 ns I S=2.5A; dls/dt=25A/µS Notes 2. Pulse test; Pulse width ≤ 80µS, Duty Cycle ≤ 1% 3. Switching time measurements performed on LEM TR-58 test equipment.