MTP2955L3

MTP2955L3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 1/8 MTP2955L3 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTP2955L3 BVDSS -60V ID -4.8A 75mΩ (typ.)RDSON@VGS=-10V , ID=-2.4A 74mΩ (typ.)RDSON@VGS=-10V , ID=-1.5A Features 70mΩ (typ.)RDSON@VGS=-10V , ID=-0.75A • Simple Drive Requirement RDSON@VGS=-4.5V , ID=-1.7A 99mΩ (typ.)• Low On-resistance

• Fast switching Characteristic
• Pb-free lead plating package Symbol Outline Absolute Maximum Ratings (Ta=25°C) MTP2955L3 SOT-223 D S G：Gate D D：Drain S：Source G Parameter Symbol Limits Unit Drain-Source V oltage VDS -60 V Gate-Source V oltage VGS ±20 V ID -4.8 *1 A Continuous Drain Current @ TA=25°C Continuous Drain Current @ TA=70°C ID -3.8 *1 A Pulsed Drain Current IDM -20 *1 A 2.7 *2 W Total Power Dissipation (TA=25℃) Pd

0.02 W/°C Linear Derating Factor

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 2/8 MTP2955L3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 14 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 45 (Note) °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -60 - - V VGS=0, ID=-250μA ΔBVDSS/ΔTj - -0.04 - V/°C Reference to 25°C, ID=-1mA VGS(th) -1.0 -1.9 -2.5 V VDS = VGS, ID=-250μA GFS - 5 - S VDS =-10V , ID=-3A IGSS - - ±100 nA VGS=±20 IDSS - - -1 μA VDS =-48V , VGS =0 IDSS - - -25 μA VDS =-48V , VGS =0, Tj=70°C - 75 100 VGS =-10V , ID=-2.4A - 74 100 VGS =-10V , ID=-1.5A - 70 90 VGS =-10V , ID=-0.75A *RDS(ON) - 99 120 mΩ VGS =-4.5V , ID=-1.7A Dynamic *Qg - 14 - *Qgs - 3.2 - *Qgd - 5.2 - nC ID=-4.8A, VDS=-30V , VGS=-10V *td(ON) - 10 - *tr - 7 - *td(OFF) - 43 - *tf - 25 - ns VDS=-30V , ID=-1A,VGS=-10V , RG=6Ω Ciss - 939 - Coss - 54 - Crss - 39 - pF VGS=0V , VDS=-25V , f=1MHz Source-Drain Diode *VSD - - -1.2 V IS=-2A, VGS=0V *trr - 29 - ns *Qrr - 20 - nC IS=-4.8A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP2955L3 SOT-223 (Pb-free lead plating package) 2500 pcs / Tape & Reel 2955

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 3/8 MTP2955L3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) -VGS=2.5V 3V 3.5V 4.5V 10V 5V Brekdown Voltage vs Ambient Temperature -100 -50 0 50 100 150 200 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage (V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-3V VGS=-4.5V VGS=-10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 1.4 0 5 10 15 20 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 100 110 120 130 140 150 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V, ID=-1.7A VGS=-10V, ID=-2.4A VGS=-10V, ID=-0.75A -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-2.4A ID=-1.5A ID=-0.75A

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 4/8 MTP2955L3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) -VGS(th), Threshold Voltage(V) ID=-250μA Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 100m 100μs 10μsRDS(ON) Limit TC=25°C, Tj=150°, VGS=10V Single Pulse 10ms 1ms Gate Charge Characteristics 048 1 2 1 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-30V ID=-4.8A Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=10V Typical Transfer Characteristics 02468 1 0 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-5V

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 5/8 MTP2955L3 CYStek Product Specification Typical Characteristics(Cont.) Power Derating Curve 0 20 40 60 80 100 120 140 160 T A, Ambient Temperature(℃) PD, Power Dissipation(W) Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=-5V VDS=-10V Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized EffectiveTransient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=120°C/W

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 6/8 MTP2955L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 7/8 MTP2955L3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C733L3 Issued Date : 2012.02.14 Revised Date : Page No. : 8/8 MTP2955L3 CYStek Product Specification SOT-223 Dimension *: Typical Inches Millimeters 3 2 1 F B A C D E G H a1 I Style: Pin 1.Gate 2.Drain 3.Source Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Date Code Device Name □□□□ 2955 D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.