MTP2402Q8 CYSTEKEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
- Simple drive requirement
- Low on-resistance
- Fast switching speed
- Pb-free lead plating package Equivalent Circuit Outline
Ordering Information
Device Package Shipping Marking MTP2402Q8 SOP-8 (Pb-free lead plating package) 2500 pcs/ Tape & Reel 2402 MTP2402Q8 SOP-8 G：Gate S：Source D：Drain
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 2/8 MTP2402Q8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -20 Gate-Source V oltage VGS ±12 V TA=25°C, VGS=-4.5V -8.3 Continuous Drain Current (Note 1) TA=70°C, VGS=-4.5V ID -6.6 Pulsed Drain Current (Note 2) IDM -30 A TA=25°C 3.1 Total Power Dissipation (Note 1) TA=70°C PD 2 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,j-a 40 °C/W Note : 1.Surface mounted on FR-4 board, t≤10sec; 125°C/W when mounted on minimum copper pad. The value in any given application depends on the user’s specific board design. 2.Pulse width ≤300μs, Duty Cycle≤2% Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0, ID=-250μA VGS(th) -0.5 -0.7 -1.0 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±12V , VDS=0 - - -1 VDS=-16V , VGS=0 IDSS - - -25 μA VDS=-16V , VGS=0, Tj=125°C - 22 30 VGS=-10V , ID=-7A - 27 35 VGS=-4.5V , ID=-4.5A *RDS(ON) - 35 50 mΩ VGS=-2.5V , ID=-2A *GFS - 13 - S VDS=-10V , ID=-7A Dynamic Ciss - 1916 - Coss - 159 - Crss - 132 - pF VDS=-10V , VGS=0, f=1MHz *td(ON) - 11 - *tr - 15 - *td(OFF) - 44 - *tf - 18 - ns VDD=-10V , ID=-2A, VGS=-10V , RG=3.3Ω *Qg - 15 - *Qgs - 3 - *Qgd - 6.3 - nC VDS=-16V , VGS=-4.5V , ID=-7A Source Drain Diode *IS - - -2 *ISM - - -8 A *VSD - -0.76 -1.2 V VGS=0V , IS=-2A *trr - 22 - ns *Qrr - 20 - nC IF=7A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 3/8 MTP2402Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 DS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=1.5V -VGS=2V -VGS=1V -VGS=2.5V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=1.5V -VGS=4.5V -VGS=2.5V-VGS=1.8V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 012345 GS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-4.5A Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-4.5A RDSON @Tj=25°C : 27mΩ typ
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 4/8 MTP2402Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=40°C/W Gate Charge Characteristics 0 5 10 15 20 25 30 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-16V ID=-7A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100m 1ms 100μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=40°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-4.5V, θJA=40°C/W
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 5/8 MTP2402Q8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 GS, Gate-Source Voltage(V) -ID, Drain Current (A) -VDS=5V Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=-5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 6/8 MTP2402Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 7/8 MTP2402Q8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C566Q8 Issued Date : 2012.06.12 Revised Date : Page No. : 8/8 MTP2402Q8 CYStek Product Specification SOP-8 Dimension c 0.170 0.250 0.006 0.010 θ 0 8° 0 8° D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:
- Lead: Pure tin plated.
- Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
- All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
- CYStek reserves the right to make changes to its products without notice.
- CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
- CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code