MTP2305AN3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • Excellent thermal and electrical capabilities
  • Compact and low profile SOT-23 package
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTP2305AN3 SOT-23 D S G G：Gate S：Source D：Drain

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 2/9 MTP2305AN3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -20 V Gate-Source V oltage VGS ±8 V Continuous Drain Current @TA=25°C, VGS=-4.5V -3.4 Continuous Drain Current @TA=70°C, VGS=-4.5V ID -2.7 Pulsed Drain Current IDM -10 A Maximum Power Dissipation Ta=25℃ 1.38 (Note) Ta=70℃ PD 0.88 (Note) W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 90 (Note) °C/W Lead Temperature, for 5 second soldering(1/8” from case) TL 260 °C Note : Surface mounted on 1 in ²FR-4 board with 2 oz. copper, t≦5sec; 270°C/W when mounted on minimum copper pad. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0, ID=-250µA VGS(th) -0.45 - - V VDS=VGS, ID=-250µA IGSS - - ±100 nA VGS=±8V , VDS=0 IDSS - - -1 µA VDS=-16V , VGS=0 - 79 108 ID=-2.8A, VGS=-4.5V *RDS(ON) - 116 150 mΩ ID=-2A, VGS=-2.5V *GFS - 6.3 - S VDS=-5V , ID=-2.8A Dynamic Ciss - 446 - Coss - 57 - Crss - 52 - pF VDS=-10V , VGS=0, f=1MHz td(ON) - 9.2 20 tr - 7.3 60 td(OFF) - 38 50 tf - 12 20 ns VDD=-10V , ID=-1A, RL=6Ω, VGEN=-4.5V , RG=6Ω Qg - 3 10 Qgs - 0.8 - Qgd - 1.1 - nC VDS=-10V , ID=-3A, VGS=-2.5V ,

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 3/9 MTP2305AN3 CYStek Product Specification Source-Drain Diode IS - - -1.6 A - VSD - -0.86 -1.2 V VGS=0V , IS=-1.6A trr* - 30 - ns Qrr* - 25 - nC IF=-3A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 4/9 MTP2305AN3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=5V -VGS=2V -VGS=3V -VGS=4V -VGS=1V Brekdown Voltage vs Ambient Temperature -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Drain-Source Breakdown Voltage (V) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=1.5V -VGS=4.5V-VGS=2.5V -VGS=2V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 012345 GS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-2.8A Drain-Source On-State Resistance vs Junction Tempearture 100 120 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-4.5V, ID=-2.8A

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 5/9 MTP2305AN3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th),Threshold Voltage-(V) ID=-250μA ID=-1mA Single Pulse Power Rating, Junction to Ambient (Note 1 on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C Gate Charge Characteristics 0246 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-10V ID=-3A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs 10μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=90°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 0.5 1.5 2.5 3.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 6/9 MTP2305AN3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) -VDS=5V Power Derating Curve 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 T A, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with 1 in² pad area Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=90°C/W

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 7/9 MTP2305AN3 CYStek Product Specification Reel Dimension C arrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 8/9 MTP2305AN3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2015.01.06 Revised Date : Page No. : 9/9 MTP2305AN3 CYStek Product Specification SOT-23 Dimension *: Typical Inches Millimeters Inches Millimeters Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 205A XX Date Code Device Code Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.