MTP2301S3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • Excellent thermal and electrical capabilities
  • Compact and low profile SOT-323 package
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTP2301S3 SOT-323 D S G G：Gate S：Source D：Drain

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 2/8 MTP2301S3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -20 V Gate-Source V oltage VGS ±8 V Continuous Drain Current @TA=25°C, VGS=-4.5V -1.6 Continuous Drain Current @TA=70°C, VGS=-4.5V ID -1.3 Pulsed Drain Current IDM -10 A Maximum Power Dissipation Ta=25℃ 340 (Note) Ta=70℃ PD 218 (Note) mW Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 367 (Note) °C/W Note : Device mounted on minimum copper pad. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V VGS=0, ID=-250µA VGS(th) -0.45 - - V VDS=VGS, ID=-250µA IGSS - - ±100 nA VGS=±8V , VDS=0 IDSS - - -1 µA VDS=-16V , VGS=0 - 75 110 ID=-1.6A, VGS=-4.5V *RDS(ON) - 113 150 mΩ ID=-1A, VGS=-2.5V *GFS - 4.5 - S VDS=-5V , ID=-1.6A Dynamic Ciss - 446 - Coss - 57 - Crss - 52 - pF VDS=-10V , VGS=0, f=1MHz td(ON) - 9.2 20 tr - 7.3 60 td(OFF) - 38 50 tf - 12 20 ns VDD=-10V , ID=-1A, VGS=-4.5V , RG=6Ω Qg - 4.4 - Qgs - 0.5 - Qgd - 1.5 - nC VDS=-10V , ID=-1.6A, VGS=-2.5V Source-Drain Diode IS - - -1.6 A - VSD - -0.86 -1.2 V VGS=0V , IS=-1.6A trr* - 30 - ns Qrr* - 25 - nC IF=-3A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 3/8 MTP2301S3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -VGS=5V, 4V, 3V -VGS=2V -VGS=1V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) -VGS=1.5V -VGS=4.5V-VGS=2.5V -VGS=2V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current (A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 240 280 320 360 400 012345 GS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-1.6A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-4.5V, ID=-1.6A

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 4/8 MTP2301S3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) -VGS(th),Normalized Threshold Voltage ID=-250μA ID=-1mA Single Pulse Power Rating, Junction to Ambient (Note 1 on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C Gate Charge Characteristics 0123456 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-10V ID=-1.6A Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-4.5V, RθJA=367°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-4.5V, RθJA=367°C/W

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 5/8 MTP2301S3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) -VDS=5V Power Derating Curve 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board with minimum pad area Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=367°C/W

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 6/8 MTP2301S3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 7/8 MTP2301S3 CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C322S3 Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 8/8 MTP2301S3 CYStek Product Specification SOT-323 Dimension Millimeters Inches Millimeters Marking: TE Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 2301 D 2.000 2.200 0.079 0.087 θ 0° 8° 0° 8° E 1.150 1.350 0.045 0.053 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.