MTP2301N3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • VDS=-20V RDS(ON)=130mΩ@VGS=-4.5V, IDS=-2.8A RDS(ON)=190mΩ@VGS=-2.5V, IDS=-2A
  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • Excellent thermal and electrical capabilities
  • Compact and low profile SOT-23 package
  • Pb-free package Equivalent Circuit Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage V DS -20 V Gate-Source V oltage V GS ±8 V Continuous Drain Current I D -2.3 A Pulsed Drain Current I DM -10 A Maximum Power Dissipation Ta=25℃ 1.25 Ta=75℃ PD 0.8 W Operating Junction Temperature Tj -55~+150 °C Storage Temperature Tstg -55~+150 °C MTP2301N3 SOT-23 G：Gate S：Source D：Drain D G S

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 2/6 MTP2301N3 CYStek Product Specification Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 100 °C/W Lead Temperature, for 5 second soldering(1/8” from case) T L 260 °C Note : Surface mounted on FR-4 board, t≦5sec. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 - - V V GS=0, ID=-250µA VGS(th) -0.45 - - V V DS=VGS, ID=-250µA IGSS - - ±100 nA V GS=±8V , VDS=0 IDSS - - -1 µA V DS=-16V , VGS=0 *ID(ON) -6 - - A V DS≥-10V , VGS=-5V - 95 130 I D=-2.8A, VGS=-4.5V *RDS(ON) - 122 190 mΩ ID=-2A, VGS=-2.5V *GFS - 6.5 - S V DS=-5V , ID=-2.8A Dynamic Ciss - 447 - Coss - 127 - Crss - 80 - pF V DS=-6V , VGS=0, f=1MHz td(ON) - 5 25 tr - 19 60 td(OFF) - 95 110 tf - 65 80 ns VDD=-6V , ID=-1A, RL=6Ω VGEN=-4.5V , RG=6Ω Qg - 5.4 10 Qgs - 0.8 - Qgd - 1.1 - nC VDS=-6V , ID=-2.8A, VGS=-4.5V , Source-Drain Diode ISD - - -1.6 A - VSD - -0.8 -1.2 V V GS=0V , ISD=-1.6A *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTP2301N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 01

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 3/6 MTP2301N3 CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 4/6 MTP2301N3 CYStek Product Specification

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 5/6 MTP2301N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C322N3 Issued Date : 2004.04.05 Revised Date :2005.08.23 Page No. : 6/6 MTP2301N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Gate 2.Source 3.Drain Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3