MTP1403BQ8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • RDS(ON)=14mΩ@VGS=-10V, ID=-12A RDS(ON)=21mΩ@VGS=-5V, ID=-9A
  • Simple drive requirement
  • Low on-resistance
  • Fast switching speed
  • Pb-free and Halogen-free package Equivalent Circuit Outline MTP1403BQ8 S：Source D：Drain G：Gate SOP-8

CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 2/6 MTP1403BQ8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -30 V Gate-Source V oltage VGS ±25 V Continuous Drain Current @TC=25 °C ID -12 A Continuous Drain Current @TC=100 °C ID -9 A Pulsed Drain Current (Note 1) IDM -48 A Avalanche Current IAS -20 A Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω EAS 20 mJ TA=25 °C 3 W Power Dissipation TA=100 °C PD 1.5 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+175 °C Note : 1.Pulse width limited by maximum junction temperature. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - V VGS=0, ID=-250μA VGS(th) -1 -1.5 -3 V VDS=VGS, ID=-250μA IGSS - - ±100 nA VGS=±25V , VDS=0 IDSS - - -1 μA VDS=-24V , VGS=0 IDSS - - -10 μA VDS=-20V , VGS=0, Tj=125°C ID(ON) (Note 1) -12 - - A VDS=-5V , VGS=-10V - 12 14 ID=-12A, VGS=-10V RDS(ON) (Note 1) - 17 21 mΩ ID=-9A, VGS=-5V GFS (Note 1) - 28 - S VDS=-5V , ID=-12A Dynamic Ciss - 6375 - Coss - 1612 - Crss - 1481 - pF VDS=-15V , VGS=0, f=1MHz td(ON) (Note 1&2) - 26 - tr (Note 1&2) - 22 - td(OFF) (Note 1&2) - 75 - tf (Note 1&2) - 15 - ns VDS=-15V , ID=-1A, VGS=-10V , RG=2.7Ω Qg(VGS=10V) (Note 1&2) - 56 - Qg(VGS=5V) (Note 1&2) - 40 - Qgs (Note 1&2) - 15 - Qgd (Note 1&2) - 18 - nC VDS=-15V , ID=-10A, VGS=-10V ,

CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 3/6 MTP1403BQ8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode IS - - -3.6 ISM(Note 3) - - -14.4 A VSD(Note 1) - - -1.2 V IF=IS, VGS=0V trr - 52 - ns Qrr - 60 - nC IF=IS, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Thermal Resistance Ratings Thermal Resistance Symbol Typical Maximum Unit Junction-to-Case RθJC 25 Junction-to-Ambient (Note) RθJA 50 °C / W Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.

CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 4/6 MTP1403BQ8 CYStek Product Specification Characteristic Curves -V - Drain-to-S ource Voltage(V) -I - Drain C urrent(A) D 10 DS GSV = - 10V - 6.0V On-R egion C haracteristics - 3.0V - 4.5V - 4.0V - 3.5V - 6 V - I - Drain C urrent(A) On-R esistance Variation with Drain C urrent and Gate Voltage R -Normalized Drain-S ource On-R esistance 1.6 0.8 DS(ON) 1.2 1.4 D 2.2 1.8 2.0 2.4 - 4.0 V - 4.5 V - 5 V V = - 3.5 VGS 30 40 - 7 V - 10 V I = - 12 A T - J unction Temperature (°C ) -50 0.6 DS (on)0.8 1.0 J -25 0 25 50 D V = - 10V 1.2 1.4 1.6 GS 15010075 125 175 On-Resistance Variation with Temperature R - Normalized Drain-S ource On-R esistance T = 125° C - V - Gate-to-S ource Voltage(V) R - On-Resistance(Ω) DS(ON) 0.01 0.02 GS T = 25° CA A 0.05 0.03 0.04 0.06 861 0 I = - 6 AD On-R esistance Variation with Gate-to-S ource Voltage -V - Gate-to-Source Voltage(V) D 1.5 GS 22 . 5 V = - 5V DS 3.534 T = 125°CA - 55°C 25°C Transfer Characteristics -I - Drain Current(A) Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25° C -V - Body Diode Forward Voltage(V) 0.6 0.1 0.0001 0.001 0.01 SD 0.2 0.4 V = 0V10 100 T = 125° CA GS 0.8 1.0 -55°C 1.2 -Is - R everse Drain C urrent(A)

CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 5/6 MTP1403BQ8 CYStek Product Specification Q - Gat e Ch ar ge( n C) GS g 15 30 I = - 12A D 6045 75 - 15V DSV = - 5V - 10V - V - Gate-to-S ource Voltage(V) Gate Charge Charact eristics - V , Drain-t o-Source Volt age(V) 1500 3000 DS 5 10 Co ss Cr ss 4500 6000 7500 Ci ss 2515 20 30 GS f = 1 MH z V = 0 V C apacitance C haracteristics C apacitance(pF) Characteristic Curves(Cont.) V = - 10 V Si n gl e Pu l se R = 125° C / W T = 25° C 10s DC Maximum S afe O perating Area -Is , Drain C urrent(A) 0.01 0.1 0.1 A θJA GS R Limit 100 DS(ON) 10 100 100μs 100ms 10ms -V , Drain - S ource Voltage(V)SD 1ms t ,Time (sec) S ingle Pulse Maximum Power Dissipation P(pk),Peak Tr ansi ent Pow er (W) 0.001 0.10.01 1001011 000 S ingle P ulse R = 125° C / W T = 25° C θJA A t ,Time (sec) Tr ansient Ther mal Response Cur ve r(t),Normalized Effective Transient Thermal Resist ance S ingle P ulse .001 -410 1010 -3 -2 Dut y Cycle = 0.5 0.05 0.01 0.01 0.02 0.1 0.1 0.2 θJA2.R =125° C / W 100 4.R (t)=r(t) + R 3.T - T = P * R (t) 11 0 θJA J 1000 θJAA θJA 1.Dut y Cycle,D = Notes: PDM

CYStech Electronics Corp. Spec. No. : C452Q8 Issued Date : 2008.12.17 Revised Date : Page No. : 6/6 MTP1403BQ8 CYStek Product Specification SOP-8 Dimension 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Marking: Top View A B Front View F C D E G Part A I H J K O M L N Right side View Part A 1403 □□□□ Date Code *: Typical H 0.1889 0.2007 4.80 5.10 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.