IRF230 ARTSCHIP | Alldatasheet

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12A, 150-200V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF230 IRF231 IRF232 IRF233 TO-220AB IRF630 IRF631 IRF632 IRF633 MTP12N18 MTP12N20 Product Summary Part Number V DSS R DS(on) I D at Tc=25¥ ID at Tc=100¥ Case Style IRF230 200V 0.40 Ω 9.0A 6.0A IRF231 150V 0.40 Ω 9.0A 6.0A IRF232 200V 0.50 Ω 8.0A 5.0A IRF233 150V 0.50 Ω 8.0A 5.0A TO-204AA IRF630 200V 0.40 Ω 9.0A 6.0A IRF631 150V 0.40 Ω 9.0A 6.0A IRF632 200V 0.50 Ω 8.0A 5.0A IRF633 150V 0.50 Ω 8.0A 5.0A MTP12N18 180V 0.35 Ω 12A 8.5A MTP12N20 200V 0.35 Ω 12A 8.5A TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7.

12A, 150-200V www.artschip.com 2 Maximum Ratings Symbol Characteristic Rating IRF220/222 IRF620/622 MTP7N20 Rating MTP7N18 Rating IRF222/223 IRF622/623 Unit VDSS Drain to Source Voltage 1 200 180 150 V VDGR Drain to Gate Voltage1 RGS=20k Ω 200 180 150 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ,Tstg Operating Junction and Storage Temperature -55 to +150 -55 to +150 -50 to +150 ¥ TL Maximum Lead Temperatures for Soldering Purposes, 1/8” From Case for 5S 275 275 275 ¥ Maximum Thermal Characteristics IRF220-233 IRF630-633 MTP12N18/20 R ӨJC Thermal Resistance Junction to Case 1.67 1.25 ¥/W PD Total Power Dissipation At Tc=25¥ 75 100 W IDM Pulsed Drain Current 2 40 40 A Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 200 180 V(BR)DSS Drain Source Breakdown Voltage IRF230/232/630/632 MTP12N20 MTP12N18 IRF231/233/631/633 150 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8 x Rated VDSS, VGS=0V, Tc=125¥ ±100 IGSS Gate-Body Leakage Current IRF230-233 IRF630-633/ MTP12N18/12N20 ±500 nA V GS=±20V, VDS=0V

12A, 150-200V www.artschip.com 3 Electrical Characteristics(Cont.)(Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF230/233/630/633 MTP12N18/12N20 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 0.40 0.50 RDS(on) Static Drain-Source On-Resistance 2 IRF230/231/630/631 IRF232/233/632/633 MTP12N18/12N20 0.35 Ω V GS=10Vđ I D=5.0A I D=6.0A 2.1 V V GS=10V; ID=6.0A 5.0 V V GS=10V; ID=12.0A; VDS(on) Drain-Source On-Voltage 2 MTP12N18/12N20 4.2 V V GS=10V; ID=6.0A Tc=100¥ gfs Forward Transconductance 3.0 S( ) V DS=10V; ID=6.0A Tc=100¥ Dynamic Characteristics Ciss Input Capacitance 800 pF Coss Output Capacitance 450 pF Crss Reverse Transfer Capacitance 150 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25¥, Figure 1,2)1 td(on) Turn-On Delay Time 30 ns tr Rise Time 50 ns td(off) Turn-Off Delay Time 50 ns tf Fall Time 40 ns VDD=90V, ID=5.0A VGS=10V, RGEN=15 Ω RGS=15 Ω td(on) Turn-On Delay Time 50 ns tr Rise Time 250 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 120 ns VDD=25V; ID=6.0A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 30 ns V GS=10V, ID=12A VDD=120V Electrical Characteristics (Cont.)(Tc=25¥ unless otherwise noted) Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.25 2.0 V Is=9.0A; V GS=0V VSD Diode Forward Voltage IRF230/231/630/831 IRF232/233/632/633 1.25 1.8 V Is=8.0A; V GS=0V trr Reverse Recovery Time 450 ns Is=4.0A; Is/dt=25A/µs Notes 2. Pulse width limited by T J. 3. Switching time measurements performed on LEM TR-58 equipment.