IRF120 ARTSCHIP | Alldatasheet

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N-Channel Power Mosfets, 11A,60-100V www.artschip.com 1

Description

These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z lDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF120 IRF121 IRF122 IRF123 TO-220AB IRF520 IRF521 IRF522 IRF523 MTP10N08 MTP10N10 Product Summary Part Number V DSS R DS(on) I D at Tc=25¥ ID at TC=100¥ Case Style IRF120 100V 0.30 Ω 8.0A 5.0A IRF121 60V 0.30 Ω 8.0A 5.0A IRF122 100V 0.40 Ω 7.0A 4.0A IRF123 60V 0.40 Ω 7.0A 4.0A TO-204AA IRF520 100V 0.30 Ω 8.0A 5.0A IRF521 60V 0.30 Ω 8.0A 5.0A IRF522 100V 0.40 Ω 7.0A 4.0A IRF523 60V 0.40 Ω 7.0A 4.0A MTP10N08 80V 0.30 Ω 10A 6.4A MTP10N10 100V 0.30 Ω 10A 6.4A TO-220AB Notes For information concerning connection diagram and package outline, refer to Section 7.

N-Channel Power Mosfets, 11A,60-100V www.artschip.com 2 Maximum Rating Symbol Characteristic Rating IRF120/122 IRF520/522 MTP10N10 Rating MTP10N08 Rating IRF122/123 IRF522/523 Unit VDSS Drain to Source Voltage 1 100 80 60 V VDGR Drain to Gate Voltage 1 RGS=20kΩ 100 80 60 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ,Tstg Operating Junction and Storage Temperature -55 to +150 -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s 275 275 275 ¥ Maximum Thermal Characteristics IRF120-123/IRF520-523 MTP10N08/10 RӨJC Thermal Reistance Junction to Case 3.12 1.67 ¥/W RӨJA Thermal Resistance, Junction to Ambient 30/80 80 ¥/W PD Total Power Dissipation at Tc=25¥ 40 75 W IDM Pulsed Drain Current 2 20 32 A Electrical Characteristics (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditionss Off Characteristics 100 V(BR)DSS Drain Source Breakdown Voltage1 IRF120/122/520/522/ MTP10N10 MTP10N08 IRF121/123/521/523 60 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS,VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8x Rated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current IRF120-123 IRF520-523/MTP10N08/10 ±100 ±500 nA V GS=±20V,VDS=0V

N-Channel Power Mosfets, 11A,60-100V www.artschip.com 3 Electrical Characteristics (Cont.) (Tc=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF12-123/IRF520-523 MTP10N08/10N10 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 0.30 0.33 RDS(on) Static Drain-Source On-Resistance 2 IRF120/121/520/521 MTP10N08/10N10 IRF122/123/522/523 0.40 Ω V GS=10V ID=4.0A ID=5.0A ID=4.0A 4.0 V V GS=10V; ID=10.0A VDS(on) Drain-Source On-Voltage 2 MTP 10N08/10N10 3.3 V V GS=10V, ID=5.0A Tc=100¥ gfs Forward Transconductance 1.5 S( ) V DS=10V, ID=4.0A Dynamic Characteristics Ciss Input Capacitance 600 pF Coss Output Capacitance 400 pF Crss Reverse Transfer Capacitance 100 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (Tc=25¥, Figure 1,2)3 td(on) Turn-On Delay Time 40 ns tr Rise Time 70 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 70 ns VDD=50V, ID=4.0A VGS=10V,RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 15 nC V GS=10V, ID=10A VDD=50V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 2.5 V I S=8.0A; VGS=0V VSD Diode Forward Voltage IRF120/121/520/521 IRF122/123/522/523 2.3 V I S=7.0A; VGS=0V trr Reverse Recovery Time 280 ns I S=4.0A; dls/dt=25A/ Notes 2. Pulse width limited by TJ 3. Switching time measurements performed on LEM TR-58 test equipment.