MTNK1N3

MTNK1N3 CYSTEKEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

Features

• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free package Symbol Outline MTNK1N3 SOT-23 D D G S G G：Gate S：Source D：Drain S

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 2/7 MTNK1N3 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDSS 60 V Gate-Source V oltage VGSS ±20 V Continuous ID 115 mA Drain Current Pulsed IDP 700 *1 mA Continuous IDR 115 mA Drain Reverse Current Pulsed IDRP 700 *1 mA Total Power Dissipation PD 200 *2 mW ESD susceptibility 1250 *3 V Channel Temperature TCH +150 °C Storage Temperature Tstg -55~+150 °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch *3. Human body model, 1.5kΩ in series with 100pF Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVDSS* 60 - - V VGS=0, ID=10μA VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA IGSS - - ±10 μA VGS=±20V , VDS=0 IDSS - - 1 μA VDS=60V , VGS=0 - 3.6 5.5 ID=100mA, VGS=5V RDS(ON)* - 3 5 Ω ID=100mA, VGS=10V GFS 100 - - mS VDS=10V, ID=100mA Ciss - 7.32 - Coss - 3.42 - Crss - 7.63 - pF VDS=10V , VGS=0, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTNK1N3 SOT-23 (Pb-free) 3000 pcs / Tape & Reel 702

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 3/7 MTNK1N3 CYStek Product Specification Characteristic Curves Typical Output Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 01234 Drain-Source Voltage -VDS(V) Drain Current - ID(A) VGS=2.2V 3.5V Typical Transfer Characteristics 0.05 0.1 0.15 0.2 0.25 0.3 01234 Gate-Source Voltage-VGS(V) Drain Current -ID(A) VDS=10V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=5V Static Drain-Source On-State resistance vs Drain Current 0.01 0.1 1 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(Ω) VGS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 5 10 15 20 25 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(Ω) ID=100mA ID=50mA Reverse Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 0 0.2 0.4 0.6 0.8 1 Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V)

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 4/7 MTNK1N3 CYStek Product Specification Characteristic Curves(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 Drain-Source Voltage -VDS(V) Capacitance---(pF) Coss Ciss Crss Power Derating Curve 100 150 200 250 0 50 100 150 200 Ambient Temperature---TA(℃) Power Dissipation---PD(mW)

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 5/7 MTNK1N3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 6/7 MTNK1N3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) 183°C 60-150 seconds 217°C 60-150 seconds − Time (tL) Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C320N3 Issued Date : 2007.11.06 Revised Date :2008.02.20 Page No. : 7/7 MTNK1N3 CYStek Product Specification SOT-23 Dimension H JKD A L GV C B S Style : Pin 1.Base 2.Emitter 3.Collector 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Marking: 702 *:Typical H 0.0005 0.0040 0.013 0.10 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : 42 Alloy ; pure tin plated
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.