MTN6515E3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Pb-free lead plating Equivalent Circuit Outline MTN6515E3 TO-220 G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 150 Gate-Source V oltage VGS ±16 V Continuous Drain Current @ TC=25°C ID 20 Continuous Drain Current @ TC=100°C ID 15 Pulsed Drain Current *1 IDM 80 Avalanche Current IAS 20 A Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω EAS 5 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 2.5 mJ Total Power Dissipation @TC=25℃ 110 PD W Total Power Dissipation @TC=100℃ 55 Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 2/6 MTTN6515E3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.36 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS =0V , ID=250μA VGS(th) 0.45 0.75 1.20 V VDS =VGS, ID=250μA IGSS - - ±100 nA VGS=±12, VDS=0 - - 1 VDS =120V , VGS =0 IDSS - - 25 μA VDS =100V , VGS =0, TJ=125°C ID(ON) *1 20 - - A VDS =10V , VGS =10V - 40 55 VGS =10V , ID=15A - 50 65 VGS =5V , ID=10A RDS(ON) *1 - 60 75 mΩ VGS =3V , ID=3A GFS *1 - 25 - S VDS =5V , ID=10A Dynamic Qg *1, 2 - 107 - Qgs *1, 2 - 18 - Qgd *1, 2 - 60 - nC ID=10A, VDS=80V , VGS=5V tr *1, 2 - 115 - tf *1, 2 - 380 - ns VDS=75V , ID=1A, VGS=4.5V , RG=6Ω Ciss - 7660 - Coss - 725 - Crss - 420 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode IS *1 - - 20 ISM *3 - - 80 A VSD *1 - - 1.3 V IF=IS, VGS=0V trr - 60 - ns Qrr - 130 - nC IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.

Ordering Information

Device Package Shipping Marking MTN6515E3 TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton N6515

CYStech Electronics Corp. Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 3/6 MTTN6515E3 CYStek Product Specification Typical Characteristics V - Drain Source Volt age( V ) I - Drain C urrent( A ) D DS 5.0V V = 10V GS 345 On-Region Characterist ics 3.0V 1.6 0.8 1.2 1.0 1.4 16 32 1.8 2.0 48 64 5.0 V 10 V GSV = 3.0 V On-R esistance Variation with Drain C urrent and Gate Voltage R -Normalized Drain-S ource On-R esistance DS(ON) I - Drain C urrent( A )D On-R esistance Variation with Temperature R - Normalized Drain-S ource On-R esistance DS (on) T - Junct ion Temper at ur e (° C) 0.4 -50 0.7 1.0 J -25 25 DI = 10A 1.3 1.6 1.9 GS 12550 75 100 150 V = 5V On-R esistance Variation wit h Gate-S ource Voltage V - Gat e-Source Volt age( V ) 0.010 DS(ON) 0.020 0.040 0.030 GS 4 6 0.080 0.060 0.050 0.070 0.090 81 0 D R - On-Resistance( Ω ) I = 5 A T = 125° CA AT = 25° C Q - Gat e Charge( nC ) V - Gat e Source Volt age( V )GS g 50 100 I = 10A D 150 200 80VV = 50VDS Gat e Charge Charact erist ics V - Drain-S ource Voltage( V ) C apacitance( pF ) 6000 3000 DS 9000 12000 Ci ss 20 30 40 GS f = 1MHz V = 0 V C apacitance C haracteristics Cr ss Co ss

CYStech Electronics Corp. Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 4/6 MTTN6515E3 CYStek Product Specification Typical Characteristics(Cont.) Body Diode Forward Voltage Variation with S ource C urrent and Temperature 25° C T = 125° C V - Body Diode Forward Voltage(V) Is - R everse Drain C urrent(A) 0.001 0.01 0.1 0.4 SD 0.2 0.6 V = 0V 100 A GS 1.00.8 1.2 -55° C 1.4

CYStech Electronics Corp. Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 5/6 MTTN6515E3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C739E3 Issued Date : 2009.10.19 Revised Date : 2010.10.18 Page No. : 6/6 MTTN6515E3 CYStek Product Specification TO-220 Dimension *: Typical Inches Millimeters A B E G I KM OP C N H D Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Marking: N6515 □□□□ 1 2 3 Device Name Date Code Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: KFC ; pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.