MTN5N50BFP DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=500V,ID=5A,RDS(ON)<1.4Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current- TC=25℃ 5 A Continuous Drain Current-TC=100℃ 2.2 EAS Single Pulse Avalanche Energy1 270 mJ PD Power Dissipation 35 W IAR 5 A TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 3.45 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 D S G MTN5N50BFP All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 500 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=500V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2.5A --- --- 1.4 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25, VGS=0V, f=1MHz --- 800 1000 pF Coss Output Capacitance --- 75 95 Crss Reverse Transfer Capacitance --- 8.5 11 Switching Characteristics td(on) Turn-On Delay Time VDS=250v.ID=5A RGEN=25Ω. (Note3,4) --- 13 35 ns tr Rise Time --- 55 120 ns td(off) Turn-Off Delay Time --- 25 60 ns tf Fall Time --- 35 80 ns Qg Total Gate Charge VGS=10V, VDS=400V ID=5A. (Note3,4) --- 13 17 nC Qgs Gate-Source Charge --- 3.4 --- nC Qgd Gate-Drain “Miller” Charge --- 6.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,ID=5A --- --- 1.5 V Is Max. Diode Forward Current --- --- --- 5 A Ism Max. Pulsed Forward Curent --- --- 20 A MTN5N50BFP All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time --- 215 --- Ns qrr Reverse Recovery Charge --- 1.26 --- nc Typical Characteristics： (TC=25℃ unless otherwise noted) IS=5A,VGS =0V diF/dt=100A/μs (Note3) Notes : 1, L=27mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature MTN5N50BFP All d ata sheet.com
www.doingter.cn — 4 — MTN5N50BFP 0086-0755-8278-9056 All d ata sheet.com