MTN540J3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel MTN540J3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 2/9 MTN540J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C ID 25 Continuous Drain Current @ TC=100°C ID 15 Pulsed Drain Current *1 IDM 100 Avalanche Current IAS 16 A Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω EAS 12.8 mJ Total Power Dissipation @TC=25℃ 56 Total Power Dissipation @TA=25℃ Pd 1.14 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.2 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0, ID=250μA VGS(th) 1 1.7 2.5 V VDS =VGS, ID=250μA IGSS - - ±100 nA VGS=±20, VDS=0 - - 10 μA VDS =100V , VGS =0 IDSS - - 250 μA VDS =100V , VGS =0, TJ=125°C - 49 60 mΩ VGS =10V , ID=18A RDS(ON) *1 - 48 60 mΩ VGS =4.5V , ID=10A GFS *1 - 20 - S VDS =10V , ID=18A Dynamic Qg *1, 2 - 29 - Qgs *1, 2 - 8 - Qgd *1, 2 - 10 - nC ID=18A, VDS=80V , VGS=10V tr *1, 2 - 5 - td(OFF) *1, 2 - 50 - tf *1, 2 - 8 - ns VDS=50V , ID=18A, VGS=10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 3/9 MTN540J3 CYStek Product Specification Ciss - 3917 - Coss - 79.3 - Crss - 50.7 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode IS *1 - - 25 ISM *3 - - 100 A VSD *1 - - 1.3 V IF=IS, VGS=0V trr - 60 - ns Qrr - 122 - nC IF=25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 4/9 MTN540J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 Drain-Source Voltage -VDS(V) Drain Current - ID(A) 10V 4.5V 3.5V VGS=2.5V VGS=3V Brekdown Voltage vs Ambient Temperature 100 110 120 130 140 -100 -50 0 50 100 150 200 Junction Temperature-Tj(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 10000 0.001 0.01 0.1 1 10 100 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(mΩ)VGS=3V VGS=4.5V VGS=10V VGS=2.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V) Tj=25°C Tj=125°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 140 180 220 260 300 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 100 150 200 -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) VGS=4.5V, ID=10A VGS=10V, ID=18A Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) ID=18A ID=10A

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 5/9 MTN540J3 CYStek Product Specification Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 Junction Temperature-Tj(°C) Threshold Voltage-VGS(th)(V) ID=250uA Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 Drain-Source Voltage -VDS(V) Capacitance---(pF) Coss Ciss Crss Forward Transfer Admittance vs Drain Current 0.1 100 0.01 0.1 1 10 100 Drain Current-ID(A) Forward Transfer Admittance-GFS(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 5 10 15 20 25 30 Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) ID=18A VDS=20V VDS=50V VDS=80V Maximum Safe Operating Area 0.01 0.1 100 1000 11 0 100 Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 Case Temperature---TC(°C) Maximum Drain Current---ID(A) 10μs Drain-Source Voltage -VDS(V) Drain Current --- ID(A) μ100 s 1ms 10ms 100ms Operation in this area is limited by RDS(ON) DC

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 6/9 MTN540J3 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=2.2 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t)

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 7/9 MTN540J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 8/9 MTN540J3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Pb-free Assembly Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. 3°C/second max. (Tsmax to Tp) Preheat 100°C 150°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C 200°C −Time(ts min to ts max) 60-120 seconds 60-180 seconds Time maintained above: −Temperature (TL) 183°C 217°C − Time (tL) 60-150 seconds 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C581J3 Issued Date : 2011.10.31 Revised Date : 2013.12.26 Page No. : 9/9 MTN540J3 CYStek Product Specification TO-252 Dimension Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code 540 □□□□ 1 2 3 Inches Millimeters Inches Millimeters DIM Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.