MTN3820F3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline MTN3820F3 TO-263 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @VGS=10V , TC=25°C ID 26 Continuous Drain Current @VGS=10V , TC=100°C ID 15 Pulsed Drain Current (Note 1) IDM 104 Avalanche Current IAS 20 A Avalanche Energy @ L=0.14mH, ID=20A, RG=25Ω EAS 35 Repetitive Avalanche Energy@ L=0.1mH (Note 2) EAR 5.6 mJ TC=25℃ 56 Power Dissipation PD W TA=25℃ 2 Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 2/10 MTN3820F3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.2 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V , ID=250μA VGS(th) 1 1.7 2.5 V VDS = VGS, ID=250μA GFS - 18 - S VDS =10V , ID=18A IGSS - - ±100 nA VGS=±20 - - 1 μA VDS =100V , VGS =0V IDSS - - 25 μA VDS =100V , VGS =0V , Tj=125°C - 64 80 VGS =10V , ID=18A *RDS(ON) - 65 80 mΩ VGS =4V , ID=10A Dynamic *Qg - 23 - *Qgs - 7 - *Qgd - 7 - nC ID=13A, VDS=80V , VGS=10V *td(ON) - 18 - *tr - 9.5 - *td(OFF) - 75 - *tf - 30 - ns VDS=50V , ID=13A, VGS=10V , RG=6Ω Ciss - 2964 - Coss - 62.3 - Crss - 56.7 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 26 *ISM - - 104 A *VSD - - 1.3 V IF=IS, VGS=0V *trr - 120 - ns *Qrr - 320 - nC IF=26A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(RoHS compliant package) 800 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 3/10 MTN3820F3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 Drain-Source Voltage -VDS(V) Drain Current - ID(A) 10V 4.5V 4.0V 3.5V VGS=2.5V VGS=3V Brekdown Voltage vs Ambient Temperature 100 110 120 130 140 -75 -25 25 75 125 175 Junction Temperature-Tj(°C) Drain-Source Breakdown Voltage BVDSS(V) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.001 0.01 0.1 1 10 100 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(mΩ) 3.5V 10V VGS=2.5V VGS=3V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 Reverse Drain Current -IDR(A) Source-Drain Voltage-VSD(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 140 180 220 260 300 02468 1 0 Tj=25°C Tj=125°C Drain-Source On-State Resistance vs Junction Tempearture 100 150 200 -60 -20 20 60 100 140 180 Junction Temperature-Tj(°C) Static Drain-Source On-State Resistance- RDS(ON)(mΩ) VGS=4V, ID=10A VGS=10V, ID=18A Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) ID=18A ID=10A

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 4/10 MTN3820F3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 Drain-Source Voltage -VDS(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.8 1.2 1.4 1.6 1.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature-Tj(°C) Threshold Voltage-VGS(th)(V) ID=250uA Forward Transfer Admittance vs Drain Current 0.1 100 0.01 0.1 1 10 100 Drain Current-ID(A) Forward Transfer Admittance-GFS(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 5 10 15 20 25 30 Total Gate Charge---Qg(nC) Gate-Source Voltage---VGS(V) ID=13A VDS=20V VDS=50V VDS=80V Maximum Safe Operating Area 0.01 0.1 100 1000 11 0 100 Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 Case Temperature---TC(°C) Maximum Drain Current---ID(A) 10μs Drain-Source Voltage -VDS(V) Drain Current --- ID(A) μ100 s 1ms 10ms 100ms Operation in this area is limited by RDS(ON) DC

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 5/10 MTN3820F3 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.ZθJC(t)=2.2 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t)

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 6/10 MTN3820F3 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 7/10 MTN3820F3 CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 8/10 MTN3820F3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 9/10 MTN3820F3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Issued Date : 2011.11.19 Revised Date : Page No. : 10/10 Spec. No. : C576F3 TO-263 Dimension *:Typical Inches Marking : MTN3820F3 CYStek Product Specification E 0.1600 0.1900 4.06 4.83 α1 - - 6° 8° F 0.0450 0.0550 1.14 1.40 α2 - - 6° 8° G 0.0900 0.1100 2.29 2.79 α3 - - 0° 5° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D 123 K L J G H E F 2 α1 3820 □□□□ Device Name Date Code I Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3