MTN3434G6 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 1/6 MTN3434G6 CYStek Product Specification BVDSS 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTN3434G6 ID 6.1A RDSON 34mΩ

Description

The MTN3434G6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit

  • Simple drive requirement MTN3434G6 • Low on-resistance
  • Capable of 2.5V gate drive
  • Pb-free lead plating package G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 V Gate-Source V oltage VGS ±12 V Continuous Drain Current @VGS=4.5V , TA=25 °C (Note 1) ID 6.1 A Continuous Drain Current @VGS=4.5V , TA=70 °C (Note 1) ID 4.9 A Pulsed Drain Current (Note 2, 3) IDM 30 A PD 1.14 W Total Power Dissipation @ TA=25 °C Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 110 °C/W Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. 180 /W when mounted on minimum copper pad.℃ 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 2/6 MTN3434G6 CYStek Product Specification Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0V , ID=250μA VGS(th) 0.6 - - V VDS=VGS, ID=1mA IGSS - - ±100 nA VGS=±12V , VDS=0V - - 1 μA VDS=30V , VGS=0V IDSS - - 5 μA VDS=24V , VGS=0V , Tj=70℃ - - 34 ID=6.1A, VGS=4.5V *RDS(ON) - - 50 mΩ ID=2A, VGS=2.5V *GFS - 20 - S VDS=10V , ID=6.1A Dynamic td(ON) - 21 - ns tr - 45 - ns td(OFF) - 40 - ns tf - 30 - ns VDS=15V , ID=1A, VGS=4.5V , RG=6Ω, RD=15Ω Qg - 8 12 nC Qgs - 1.9 - nC Qgd - 2.6 - nC VDS=15V , ID=6.1A, VGS=4.5V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Source Drain Diode Symbol Min. Typ. Max. Unit Test Conditions *VSD - - 1.2 V IS=1.7A,VGS=0V *Trr - 40 - ns IS=1.7A,VGS=0V , dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 3/6 MTN3434G6 CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 4/6 MTN3434G6 CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 5/6 MTN3434G6 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C781G6 Issued Date : 2011.06.10 Revised Date : Page No. : 6/6 MTN3434G6 CYStek Product Specification TSOP-6 Dimension Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Style: Pin 1. Drain (D) Pin 2. Drain (D) Pin 3. Gate (G) Pin 4. Source (S) Pin 5. Drain (D) Pin 6. Drain (D) Date Code Device Name 6-Lead TSOP-6 Plastic Surface Mounted Package CYStek Package Code: G6 Marking: 3434 □□□□ DIM Min. Max. Min. Max. D 0.0748 REF 1.90 REF J 0.0177 REF 0.45 REF d1 0.0374 REF 0.95 REF K 0.0236 REF 0.60 REF d2 0.0374 REF 0.95 REF L 0° 10° 0° 10° F 0.0276 0.0394 0.70 1.00 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.