MTN3410F3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • BVDSS=100V
  • Low On Resistance
  • Simple Drive Requirement
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline MTN3410F3 TO-263 G：Gate D：Drain S：Source BVDSS : 100V RDS(ON) : 20mΩ (max.) ID : 59A G D S

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 2/8 MTN3410F3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 V Gate-Source V oltage VGS ±20 V Continuous Drain Current ID 59* A Continuous Drain Current @TC=100°C ID 40* A Pulsed Drain Current @ VGS=10V (Note 1) IDM 236* A Single Pulse Avalanche Energy (Note 2) EAS 132 mJ Avalanche Current (Note 1) IAR 59 A Repetitive Avalanche Energy (Note 1) EAR 11 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns W Total Power Dissipation (TC=25℃) Linear Derating Factor PD 110

0.88 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=59A, VDD=50V, L=76μH, RG=25Ω, starting TJ=+25℃. 3. ISD≤59A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 1.13 °C/W Thermal Resistance, Junction-to-ambient, max* Rth,j-a 40 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W *When mounted on the minimum pad size (PCB mount).

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 3/8 MTN3410F3 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0, ID=250μA, Tj=25℃ VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 25 - S VDS =15V , ID=29.5A IGSS - - ±100 nA VGS=±20 - - 1 VDS =100V , VGS =0 IDSS - - 10 μA VDS =80V , VGS =0, Tj=125°C *RDS(ON) - - 20 mΩ VGS =10V , ID=29.5A Dynamic *Qg - - 75 *Qgs - - 25 *Qgd - - 20 nC VDS=80V , ID=59A, VGS=10V *td(ON) - - 104 *tr - - 338 *td(OFF) - - 182 *tf - - 176 ns VDS=50V , ID=59A, VGS=10V , RG=25Ω Ciss - - 4760 Coss - - 450 Crss - - 210 pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 59 *ISM - - 236 A *VSD - - 1.5 V IS=59A, VGS=0V *trr - - 110 ns *Qrr - - 320 nC VGS=0, IF=59A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(RoHS compliant) 800 pcs/ Tape & Reel

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 4/8 MTN3410F3 CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 5/8 MTN3410F3 CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 6/8 MTN3410F3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 7/8 MTN3410F3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C795F3 Issued Date : 2011.03.01 Revised Date : Page No. : 8/8 MTN3410F3 CYStek Product Specification TO-263 Dimension Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 Marking : 3410 □□□□ Device Name Date Code *:Typical E 0.1600 0.1900 4.06 4.83 α1 - - 6° 8° F 0.0450 0.0550 1.14 1.40 α2 - - 6° 8° G 0.0900 0.1100 2.29 2.79 α3 - - 0° 5° H 0.0180 0.0290 0.46 0.74 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

  • Lead : Pure tin plated.
  • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. A B C D 123 K L J G H E F 2 α1 I