MTN3055L3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Pb-free lead plating package Symbol Outline MTN3055L3 SOT-223 G D S D G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 30 V Gate-Source V oltage VGS ±20 V Continuous Drain Current @VGS=10V , TA=25°C ID 8.3 A Continuous Drain Current @VGS=10V , TA=70°C ID 6.6 A Pulsed Drain Current *1 IDM 20 A TA=25℃ 2.7 Total Power Dissipation *2 PD W TA=100℃ 1.1 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by safe operating area *2. Surface mounted on a 1 in pad of 2 oz. copper, t≤10s.

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 2/8 MTN3055L3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 18 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 45 (Note) °C/W Note : Surface mounted on a 1 in pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 30 - - V VGS=0, ID=250μA ∆BVDSS/∆Tj - 0.02 - V/°C Reference to 25°C, ID=250μA VGS(th) 1.0 1.6 2.5 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V , VDS=0 IDSS - - 1 VDS=30V , VGS=0 IDSS - - 25 μA VDS=24V , VGS=0 (Tj=70°C) - 19 26 ID=4A, VGS=10V *RDS(ON) - 25 40 mΩ ID=3A, VGS=4.5V Dynamic Ciss - 745 - Coss - 52 - Crss - 58 - pF VDS=25V , VGS=0, f=1MHz *td(ON) - 4.5 - *tr - 14 - *td(OFF) - 18 - *tf - 3.7 - ns VDS=15V , ID=1A, VGS=10V , RG=3.3Ω *Qg - 7.4 - *Qgs - 2.6 - *Qgd - 2.8 - nC VDS=24V , ID=4A, VGS=5V Source-Drain Diode *VSD - - 1.3 V VGS=0V , IS=2A *IS - - 4 *ISM - - 20 A VD=VGS=0V , VS=1.3V *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating package) 2500 pcs / Tape & Reel

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 3/8 MTN3055L3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0123456789 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V 4.5V VGS=2.5V VGS=3V VGS=3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=3VVGS=2.5V VGS=10V VGS=4V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 120 140 160 180 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V, ID=3A VGS=10V, ID=4A VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=5A ID=4A

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 4/8 MTN3055L3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 4 8 12 16 20 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=4A VDS=24V VDS=20V VDS=16V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs 10μs TA=25°C, Tj=150°C, VGS=10V, RθJA=45°C/W Single Pulse RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=45°C/W

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 5/8 MTN3055L3 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=45°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=45°C/W

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 6/8 MTN3055L3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 7/8 MTN3055L3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C390L3 Issued Date : 2010.10.05 Revised Date : 2012.08.20 Page No. : 8/8 MTN3055L3 CYStek Product Specification SOT-223 Dimension *: Typical Inches Millimeters 3 2 1 F B A C D E G H a1 I Style: Pin 1.Gate 2.Drain 3.Source Marking: 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 Device Name Date Code D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o - E *0.0906 - *2.30 - a2 0 o 10 o 0 o 10 o F 0.2480 0.2638 6.30 6.70 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.