MTN2510E3 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline MTN2510E3 TO-220 G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 100 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C ID 50 Continuous Drain Current @ TC=100°C ID 35 Pulsed Drain Current (Note 1) IDM 150 Avalanche Current IAS 30 A Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω EAS 45 Repetitive Avalanche Energy@ L=0.05mH (Note 2) EAR 22.5 mJ TC=25°C 155 Power Dissipation PD W TC=100°C 61 Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1%

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 2/7 MTN2510E3 CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 0.97 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V , ID=250μA VGS(th) 1.5 2.4 4.0 V VDS = VGS, ID=250μA GFS - 38 - S VDS =5V , ID=30A IGSS - - ±100 nA VGS=±30 - - 1 μA VDS =80V , VGS =0V IDSS - - 25 μA VDS =70V , VGS =0V , Tj=125°C *RDS(ON) - 17 30 mΩ VGS =10V , ID=30A *ID(ON) 50 - - A VDS =10V , VGS =10V Dynamic *Qg - 25 - *Qgs - 6.1 - *Qgd - 9.2 - nC ID=30A, VDS=50V , VGS=10V *td(ON) - 19 - *tr - 67 - *td(OFF) - 75 - *tf - 34 - ns VDS=50V , ID=1A, VGS=10V , RG=6Ω Ciss - 1888 - Coss - 236 - Crss - 124 - pF VGS=0V , VDS=25V , f=1MHz Rg - 2 - Ω VGS=15mV , VDS=0V , f=1MHz Source-Drain Diode *IS - - 50 *ISM - - 150 A *VSD - 0.88 1.3 V IF=IS, VGS=0V *trr - 120 - ns *Qrr - 380 - nC IF=25A, VGS=0, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

(Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 3/7 MTN2510E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 150 02468 1 0 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V,7V,6V VGS=5V VGS=4V VGS=3V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=30A RDS(ON)@Tj=25°C : 17mΩ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=30A

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 4/7 MTN2510E3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 5 10 15 20 25 30 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=30A VDS=50V VDS=20V Maximum Safe Operating Area 0.01 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=175°C VGS=10V, θJC=0.97°C/W Single Pulse DC 100ms RDSON Limited 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=0.97°C/W

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 5/7 MTN2510E3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 120 140 02468 1 0 1 2 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=5V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C θJC=0.97°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.97°C/W

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 6/7 MTN2510E3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C433E3 Issued Date : 2010.07.15 Revised Date : 2013.04.29 Page No. : 7/7 MTN2510E3 CYStek Product Specification TO-220 Dimension *: Typical Millimeters Inches Millimeters Inches DIM Min. Max. Min. Max. Marking: CYS N2510 □□□□ 1 2 3 Device Name Date Code Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 DIM Min. Max. Min. Max. Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.