MTN14N60FP CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Fast Switching Characteristic
  • Insulating package, front/back side insulating voltage=2500V(AC)
  • RoHS compliant package

Applications

  • Adapter
  • Switching Mode Power Supply Symbol Outline TO-220FP ID : 14A G D S RDS(ON) : 0.55Ω(max.) BVDSS : 600V MTN14N60FP S：Source G：Gate D：Drain

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 2/9 MTN14N60FP CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 600 V Gate-Source V oltage VGS ±30 V Continuous Drain Current ID 14* A Continuous Drain Current @TC=100°C ID 8.4* A Pulsed Drain Current @ VGS=10V (Note 1) IDM 56* A Single Pulse Avalanche Energy (Note 2) EAS 53 mJ Avalanche Current (Note 1) IAR 14 A Repetitive Avalanche Energy (Note 1) EAR 16 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor

0.35 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C *Drain current limited by maximum junction temperature Note : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=14A, VDD=50V, L=0.5mH, RG=25Ω, starting TJ=+25℃. 3. ISD≤7.5A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.58 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 100 °C/W

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 3/9 MTN14N60FP CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 600 - - V VGS=0, ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.7 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 5 - S VDS =15V , ID=7A IGSS - - ±100 nA VGS=±30 IDSS - - 1 μA VDS =600V , VGS =0 - - 10 VDS =480V , VGS =0, Tj=125°C *RDS(ON) - - 0.55 Ω VGS =10V , ID=8.4A Dynamic *Qg - 40 - *Qgs - 10 - *Qgd - 15 - nC ID=14A, VDD=250V , VGS=10V *td(ON) - 16 - *tr - 30 - *td(OFF) - 48 - *tf - 34 - ns VDD=250V , ID=14A, VGS=10V , RG=9.1Ω Ciss - 2222 - Coss - 180 - Crss - 17 - pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 14 *ISM - - 56 A *VSD - - 1.5 V IS=14A, VGS=0V *trr - 392 - ns *Qrr - 3529 - nC VGS=0, IF=14A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN14N60FP TO-220FP (RoHS compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton 14N60

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 4/9 MTN14N60FP CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 Drain-Source Voltage -VDS(V) Drain Current - ID(A) VGS=4.5V 5.5V 6V10V Typical Transfer Characteristics 2468 1 Gate-Source Voltage-VGS(V) Drain Current -ID(A) VDS=10V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 Drain Current-ID(A) Static Drain-Source On-State Resistance-RDS(on)(mΩ) VGS=10V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 600 1100 1600 02468 1 0 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) ID=20A Body Diode Forward Voltage Drop vs Source Current and Temperature 0.001 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 Source-Drain Voltage-VSD(V) Reverse Drain Current -IDR(A) 25°C VGS=0V 150°C Breakdown Voltaeg vs Junction Temperature 0.8 0.9 1.1 1.2 -100 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature-Tj(°C) Normalized Drain-Source Breakdown Voltage VGS=0V, ID=250uA

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 5/9 MTN14N60FP CYStek Product Specification Typical Characteristics(Cont.) Drain-Source On-resistance vs Junction Temperature 0.5 1.5 2.5 -100 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature-Tj(°C) Normalized Drain-Source On-resistance VGS=10V, ID=8.4A Gate Charge Characteristics 0 1 02 03 04 05 0 Total Gate Charge-Qg(nC) Gate-Source Voltage-VGS(V) ID=14A VDS=400V VDS=250V VDS=100V Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 Case Temperature-Tc(°C) Maximum Drain Current---ID(A) Maximum Safe Operating Area 0.01 0.1 100 1 10 100 1000 Drain-Source Voltage-VDS(V) Drain Current---ID(A) DC 100ms10ms 1ms 100μs 10μs Operation in this area is limited by RDS(ON) TC=25°C, TJ=150°C, Single Pulse

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 6/9 MTN14N60FP CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 7/9 MTN14N60FP CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 8/9 MTN14N60FP CYStek Product Specification TO-220FP (C Forming) Dimension *Typical Inches Millimeters Inches Millimeters Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Marking: Device Name Date Code A1 0.051 REF 1.300 REF e 0.100* 2.540* D 0.392 0.408 9.960 10.360 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

CYStech Electronics Corp. Spec. No. : C715FP Issued Date : 2009.09.16 Revised Date : 2011.03.29 Page No. : 9/9 MTN14N60FP CYStek Product Specification TO-220FP (S Forming) Dimension *Typical Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Marking: Date Code Device Name A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.