MTN12N60FP CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package

Applications

  • Ballast
  • Inverter Symbol Outline TO-220FP MTN12N60FP G：Gate D：Drain S：Source BVDSS :600V RDS(ON) : 0.6Ω typ. G D S ID : 12A

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 2/9 MTN12N60FP CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 600 V Gate-Source V oltage VGS ±30 V Continuous Drain Current ID 12* A Continuous Drain Current @TC=100°C ID 7.4* A Pulsed Drain Current @ VGS=10V (Note 2) IDM 48* A Single Pulse Avalanche Energy (Note 3) EAS 870 mJ Avalanche Current (Note 2) IAR 12 A Repetitive Avalanche Energy (Note 2) EAR 22.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.5 V/ns Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds TL 300 °C W Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ PD 51

0.41 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C * Drain current limited by maximum junction temperature. Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=12A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. 4. IAS=12A, VDD=50V , L=11mH, RG=25Ω, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.43 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 62.5 °C/W

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 3/9 MTN12N60FP CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 600 - - V VGS=0, ID=250μA ∆BVDSS/∆Tj - 0.5 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 5 - S VDS =15V , ID=6A IGSS - - ±100 nA VGS=±30 - - 1 VDS =600V , VGS =0 IDSS - - 25 μA VDS =480V , VGS =0, Tj=125°C *RDS(ON) - 0.6 0.65 Ω VGS =10V , ID=6A Dynamic *Qg - 48 63 *Qgs - 8.5 - *Qgd - 21 - nC ID=12A, VDD=400V , VGS=10V *td(ON) - 30 70 *tr - 85 180 *td(OFF) - 140 280 *tf - 90 190 ns VDD=300V , ID=12A, VGS=10V , RG=25Ω Ciss - 1760 2290 Coss - 182 235 Crss - 21 28 pF VGS=0V , VDS=25V , f=1MHz Source-Drain Diode *IS - - 12 *ISM - - 48 A *VSD - - 1.5 V IS=12A, VGS=0V *trr - 460 - ns *Qrr - 4.9 - μC VGS=0, IF=12A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN12N60FP TO-220FP (RoHS compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton 12N60

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 4/9 MTN12N60FP CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 5/9 MTN12N60FP CYStek Product Specification Characteristic Curves(Cont.)

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 6/9 MTN12N60FP CYStek Product Specification Test Circuit and Waveforms

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 7/9 MTN12N60FP CYStek Product Specification Test Circuit and Waveforms(Cont.)

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 8/9 MTN12N60FP CYStek Product Specification TO-220FP (C Forming) Dimension *Typical Inches Millimeters Marking: Date Code Device Name Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP A1 0.051 REF 1.300 REF e 0.100* 2.540* D 0.392 0.408 9.960 10.360 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 9/9 MTN12N60FP CYStek Product Specification TO-220FP (S Forming) Dimension *Typical Inches Millimeters Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Marking: Date Code Device Name A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.