MTN1012C3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Simple drive requirement
  • Small package outline
  • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 20 Gate-Source V oltage VGS ±8 V Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) 560 Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) ID 400 mA Pulsed Drain Current (Notes 1, 2) IDM 2.5 A TA=25℃ 150 Maximum Power Dissipation (Note 3) TA=85℃ PD mW ESD susceptibility 2000 (Note 4) V Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board. 3. Human body model, 1.5kΩ in series with 100pF MTN1012C3 SOT-523 G：Gate S：Source D：Drain G S D

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 2/8 MTN1012C3 CYStek Product Specification Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 833 °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 20 - - V VGS=0, ID=250μA ∆BVDSS/∆Tj - 0.02 - V/°C Reference to 25°C, ID=1mA VGS(th) 0.5 0.92 1.2 V VDS=VGS, ID=250μA IGSS - - ±10 VGS=±8V , VDS=0 - - 1 VDS=20V , VGS=0 IDSS - - 10 μA VDS=16V , VGS=0 (Tj=70°C) - 320 450 VGS=4.5V , ID=600mA - 510 700 VGS=2.5V , ID=500mA *RDS(ON) - 980 1200 mΩ VGS=1.8V , ID=350mA *GFS - 1 - S VDS=10V , ID=400mA Dynamic Ciss - 60 - Coss - 14 - Crss - 9 - pF VDS=10V , VGS=0, f=1MHz td(ON) - 5 - tr - 5 - td(OFF) - 24 - tf - 18 - ns VDS=10V , ID=200mA, VGS=4.5V RG=10Ω Qg - 0.76 - Qgs - 0.074 - Qgd - 0.27 - nC VDS=10V , ID=250mA, VGS=4.5V Source-Drain Diode *VSD - 0.8 1.2 V VGS=0V , IS=150mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking MTN1012C3 SOT-523 (Pb-free package) 3000 pcs / Tape & Reel QT

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 3/8 MTN1012C3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 V DS, Drain-Source Voltage(V) ID, Drain Current (A) VGS=2.5V 5V, 4.5V, 4V, 3.5V VGS=1V VGS=1.5V VGS=2V VGS=3V Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 200 400 600 800 1000 1200 1400 1600 I D, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=4.5V VGS=2.5V VGS=1.8V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1 IDR, Reverse Drain Current (A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 1000 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.6 0.8 1.2 1.4 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=4.5V, ID=600mA VGS=1.8V, ID=350mA VGS=2.5V, ID=400mA VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=600mA ID=350mA

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 4/8 MTN1012C3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA Single Pulse Power Rating, Junction to Ambient (Note on page 2) 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=833°C/W Gate Charge Characteristics 00 . 511 . 5 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=10V ID=250mA Maximum Safe Operating Area 0.001 0.01 0.1 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current (A) DC 10ms 100m 1ms 100μs TA=25°C, Tj=150°C, VGS=4.5V, RθJA=833°C/W Single Pulse Maximum Drain Current vs JunctionTemperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A)TA=25°C, VGS=4.5V, RθJA=833°C/W

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 5/8 MTN1012C3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=5V Power Derating Curve 0.05 0.1 0.15 0.2 0 20 40 60 80 100 120 140 160 TA, Ambient Temperature(℃) PD, Power Dissipation(W) Mounted on FR-4 board Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=5V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 4.RθJA=833°C/W

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 6/8 MTN1012C3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 7/8 MTN1012C3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C814C3 Issued Date : 2012.05.15 Revised Date : 2012.05.17 Page No. : 8/8 MTN1012C3 CYStek Product Specification SOT-523 Dimension *: Typical N H F J A B C D E G I K L M O Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-523 Plastic Surface Mounted Package CYStek Package Code: C3 Marking: QT Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.