MTEJ0P20J3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTEJ0P20J3 TO-252(DPAK) G D S G：Gate D：Drain S：Source

Ordering Information

TO-252 MTEJ0P20J3-0-T3-G 2500 pcs / Tape & Reel(Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 2/9 MTEJ0P20J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS -200 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C ID -4 Continuous Drain Current @ TC=100°C ID -2.5 Pulsed Drain Current *1 IDM -12 Avalanche Current IAS -4 A Avalanche Energy @ L=2mH, ID=-2A, RG=25Ω EAS 4 Repetitive Avalanche Energy @ L=0.05mH *2 EAR 0.4 mJ Total Power Dissipation @TC=25℃ 38 Total Power Dissipation @TC=100℃ Pd 15 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 3.3 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 110 °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -200 - - VGS=0, ID=-250μA VGS(th) -2 -3 -4 V VDS =VGS, ID=-250μA IGSS - - ±100 nA VGS=±30, VDS=0 - - -1 VDS =-160V , VGS =0 IDSS - - -25 μA VDS =-160V , VGS =0, TJ=125°C - 1.1 1.3 VGS =-10V , ID=-3A RDS(ON) *1 - 1.1 1.3 Ω VGS =-6V , ID=-2A GFS *1 - 4 - S VDS =-5V , ID=-3A Dynamic Qg *1, 2 - 14 - Qgs *1, 2 - 3.8 - Qgd *1, 2 - 4.6 - nC ID=-4A, VDS=-160V , VGS=-10V tr *1, 2 - 10 - td(OFF) *1, 2 - 32 - tf *1, 2 - 10 - ns VDS=-100V , ID=-2A, VGS=-10V , RG=6Ω Ciss - 777 - Coss - 38 - Crss - 17 - pF VGS=0V , VDS=-25V , f=1MHz

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 3/9 MTEJ0P20J3 CYStek Product Specification Source-Drain Diode IS *1 - - -4 ISM *3 - - -12 A VSD *1 - -0.79 -1.2 V IF=-1A, VGS=0V trr - 240 - ns Qrr - 320 - nC IF=-4A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 4/9 MTEJ0P20J3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 DS, Drain-Source Voltage(V) -ID, Drain Current(A) 10V 6V -VGS=4V -VGS=5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -70 -20 30 80 130 180 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.6 0.8 1.2 1.4 1.6 1.8 0.01 0.1 1 10 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(Ω) VGS=-4V VGS=-10V VGS=-6V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0.6 0.8 1.2 1.4 1.6 1.8 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-3A RDS(ON)@Tj=25°C : 1Ω typ -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(Ω) ID=-3A

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 5/9 MTEJ0P20J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0 1 02 03 0 Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -70 -20 30 80 130 180 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Ciss -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Crss f=1MHz Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) RDS(ON) Limited DC 10ms 100ms 1ms 100μs TC=25°C, Tj=150°C, VGS=-10V, RθJC=3.3°C/W, single pulse Gate Charge Characteristics 048 1 2 1 6 2 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-80V ID=-3A Maximum Drain Current vs Case Temperature 0.5 1.5 2.5 3.5 4.5 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) -ID, Maximum Drain Current(A)VGS=-10V Typical Transfer Characteristics 02468 1 0 1 2 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 6/9 MTEJ0P20J3 CYStek Product Specification Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-5V Pulsed Ta=25°C Power Derating Curve 0 25 50 75 100 125 150 175 T C, Case Temperature(℃) PD, Power Dissipation(W) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.3°C/W

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 7/9 MTEJ0P20J3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 8/9 MTEJ0P20J3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C897J3 Issued Date : 2013.03.18 Revised Date : 2013.12.30 Page No. : 9/9 MTEJ0P20J3 CYStek Product Specification TO-252 Dimension Inches Millimeters Inches Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code EJ0 P20 □□□□ 1 2 3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.