MTEE2N20J3 DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=200V,ID=5A,RDS(ON)≤0.47Ω@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±30 V ID Continuous Drain Current-TC=25℃ 5 A Continuous Drain Current-TC=100℃ 3.1 Pulsed Drain Current --- EAS Single Pulse Avalanche Energy1 60 mJ PD Power Dissipation(TC=25℃) 32 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.27 ℃/W RƟJA Thermal Resistance,Junction to Ambient 110 D S G MTEE2N20J3 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 200 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=200V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±30V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 --- 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=2.5A --- --- 0.47 Ω Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 210 270 pF Coss Output Capacitance --- 40 50 Crss Reverse Transfer Capacitance --- 6 8 Switching Characteristics td(on) Turn-On Delay Time3,4 VDS=250V, ID=5A, RGEN=25Ω --- 7 25 ns tr Rise Time3,4 --- 55 120 ns td(off) Turn-Off Delay Time3,4 --- 9 30 ns tf Fall Time3,4 --- 25 60 ns Qg Total Gate Charge3,4 VGS=10V, VDS=400V, ID=5A --- 6 7.5 nC Qgs Gate-Source Charge 3,4 --- 1.5 --- nC Qgd Gate-Drain “Miller” Charge3,4 --- 2.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,ID=5A --- --- 1.5 V MTEE2N20J3 All d ata sheet.com
www.doingter.cn — 3 — Notes: 1, L=3.0mH, IAS=5A, VDD=50V, RG=25Ω, Starting TJ =25°C 2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) MTEE2N20J3 All d ata sheet.com
www.doingter.cn — 4 — MTEE2N20J3 All d ata sheet.com
www.doingter.cn — 5 — MTEE2N20J3 0086-0755-8278-9056 All d ata sheet.com