MTE8D0N08H8 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 1/9 MTE8D0N08H8 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE8D0N08H8 BVDSS 80V ID@VGS=10V , TC=25°C 50A 32A ID@VGS=10V , TC=100°C 15A ID@VGS=10V , TA=25°C Features 12A ID@VGS=10V , TA=70°C RDS(ON)@VGS=10V , ID=30A 7.1 mΩ(typ)• Single Drive Requirement RDS(ON)@VGS=7V , ID=20A 7.9 mΩ(typ)• Low On-resistance

  • Fast Switching Characteristic
  • Pb-free lead plating and Halogen-free package Symbol Outline MTE8D0N08H8 DFN5×6 Pin 1 G：Gate D：Drain S：Source

Ordering Information

DFN5×6 MTE8D0N08H8-0-T6-G (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 2/9 MTE8D0N08H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 80 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C, VGS=10V 50 Continuous Drain Current @ TC=100°C, VGS=10V ID 32 Continuous Drain Current @ TA=25°C, VGS=10V 15 Continuous Drain Current @ TA=70°C, VGS=10V IDSM 12 Pulsed Drain Current IDM 200 *1, 2 A TC=25°C 54 TC=100°C PD 22 TA=25°C 5 Total Power Dissipation TA=70°C PDSM 3.2 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.3 °C/W Thermal Resistance, Junction-to-ambient, max Rth,j-a 25 *3 °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 60°C/W at steady state. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 80 - - V VGS=0V , ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA GFS *1 - 29 - S VDS =5V , ID=20A IGSS - - ±100 nA VGS=±30V - - 1 VDS =80V , VGS =0V IDSS - - 25 μA VDS =64V , VGS =0V , Tj=125°C - 7.1 9.5 VGS =10V , ID=30A RDS(ON) *1 - 7.9 14 mΩ VGS =7V , ID=20A Dynamic Ciss - 2162 - Coss - 286 - Crss - 162 - pF VGS=0V , VDS=25V , f=1MHz

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 3/9 MTE8D0N08H8 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg *1, 2 - 50.5 - Qgs *1, 2 - 6.9 - Qgd *1, 2 - 28.2 - nC VDS=40V , VGS=10V , ID=30A tr *1, 2 - 13.2 - td(OFF) *1, 2 - 53.2 - ns tf *1, 2 - 19.8 - VDS=40V , ID=1A, VGS=10V , RGS=3.3Ω Rg - 0.8 - Ω f=1MHz Source-Drain Diode IS *1 - - 50 ISM *3 - - 200 A VSD *1 - 0.82 1.2 V IF=30A, VGS=0V trr - 26 - ns Qrr - 30 - nC IF=10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 4/9 MTE8D0N08H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 160 02468 1 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V, 7V VGS=4V VGS=5V VGS=6V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=7V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 I DR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=125°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V, ID=30A RDS( ON)@Tj=25°C :7.1mΩ typ. VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=30A

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 5/9 MTE8D0N08H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), NormalizedThreshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 1 02 03 04 05 06 0 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) VDS=40V ID=30A Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS( ON) Limit TC=25°C, Tj=150°C, VGS=10V, RθJC=2.3°C/W Single Pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 T C, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=2.3°C/W

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 6/9 MTE8D0N08H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 120 140 160 180 200 0123456789 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 1E-04 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C θJC=2.3°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.3 °C/W

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 7/9 MTE8D0N08H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 8/9 MTE8D0N08H8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C991H8 Issued Date : 2014.12.09 Revised Date : Page No. : 9/9 MTE8D0N08H8 CYStek Product Specification DFN5×6 Dimension Millimeters Inches Millimeters Inches Marking : 8-Lead DFN5×6 Plastic Package Device Name E8D0 N08 Date Code 4.824 4.976 0.190 0.196 θ 10° 12° 10° 12° D2 E2 5.674 5.826 0.223 0.229 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.