MTE5D0N10RE3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline

Ordering Information

MTE5D0N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton TO-220 MTE5D0N10RE3 G：Gate D：Drain S：Source BVDSS 100V ID@VGS=10V , TC=25°C 120A IDSM@VGS=10V , TA=25°C 11.2A RDS(ON)@VGS=10V , ID=50A 7 mΩ(typ) G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 2/ 8 MTE5D0N10RE3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) V DS 100 Gate-Source V oltage V GS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 1) 120* Continuous Drain Current @TC=100°C, VGS=10V (Note 1) ID 84.8* Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 11.6 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 9.3 Pulsed Drain Current @ VGS=10V I DM 350* Avalanche Current @L=100μH I AS 90 A Single Pulse Avalanche Energy @ L=1mH, ID=40 Amps, VDD=50V (Note 4) EAS 800 Repetitive Avalanche Energy (Note 3) E AR 25 mJ TC=25°C (Note 1) 250 TC=100°C (Note 1) PD 125 TA=25°C (Note 2) 2.1 Power Dissipation TA=70°C (Note 2) PDSM 1.4 W Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL 300 Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG 260 Operating Junction and Storage Temperature Tj, Tstg -55~+175 *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max R θJC 0.6 Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 58 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=0.1mH, IAS=50A, VGS=10V , VDD=50V . Characteristics (Tj=25°C, unless otherwise specified)

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 3/ 8 MTE5D0N10RE3 CYStek Product Specification Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V V GS=0V , ID=250μA ∆BVDSS/∆Tj - 80 - mV/°C Reference to 25 °C, ID=250μA VGS(th) 2 - 4 V V DS = VGS, ID=250μA *GFS - 27.5 - S V DS =10V , ID=20A IGSS - - ±100 nA VGS=±20V , VDS=0V - - 1 V DS =80V , VGS =0V IDSS - - 25 μA VDS =80V , VGS =0V , Tj=125°C *RDS(ON) - 7 9.5 mΩ VGS =10V , ID=50A Dynamic *Qg - 68.8 - *Qgs - 23.9 - *Qgd - 12.9 - nC V DD=80V , ID=50A,VGS=10V *td(ON) - 36.8 - *tr - 21 - *td(OFF) - 63 - *tf - 14 - ns VDD=50V , ID=20A, VGS=10V , RG=3Ω Ciss - 4903 - Coss - 481 - Crss - 5 - pF V GS=0V , VDS=50V , f=1MHz Rg - 2.5 - Ω f=1MHz Source-Drain Diode *IS - - 120 *ISM - - 350 A *VSD - 0.83 1.2 V I S=20A, VGS=0V *trr - 47.5 - ns *Qrr - 99.3 - nC VGS=0V , IF=20A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 4/ 8 MTE5D0N10RE3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 150 200 250 300 350 02468 1 0 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V 5.5V VGS=4.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 5 10 15 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=50A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=50A RDS( ON)@Tj=25°C : 7mΩ typ.

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 5/ 8 MTE5D0N10RE3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 0 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=15V VDS=10V Gate Charge Characteristics 0 7 14 21 28 35 42 49 56 63 70 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=20A VDS=20V, 50V, 80V from left to right Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs 10μs RDS(ON) Limited TC=25°C, Tj=175°C, VGS=10V,RθJC=0.6°C/W single pulse Maximum Drain Current vs Case Temperature 100 120 140 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=0.6°C/W

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 6/ 8 MTE5D0N10RE3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 150 200 250 300 350 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=175°C TC=25°C RθJC=0.6°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.6 °C/W

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 7/ 8 MTE5D0N10RE3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3 °C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6 °C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C029E3 Issued Date : 2017.11.16 Revised Date : Page No. : 8/ 8 MTE5D0N10RE3 CYStek Product Specification TO-220 Dimension *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 E5D0 N10R □□□□