MTE55N10FP CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Insulating package, front/back side insulating voltage=2500V(AC)
  • RoHS compliant package

Ordering Information

MTE55N10FP-0-UB-S TO-220FP (RoHS compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 2/ 8 MTE55N10FP CYStek Product Specification Symbol Outline TO-220FP MTE55N10FP G D S G：Gate D：Drain S：Source Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 100 Gate-Source V oltage VGS ±30 V Continuous Drain Current @TC=25°C, VGS=10V (Note 1) 18* Continuous Drain Current @TC=100°C, VGS=10V (Note 1) ID 13* Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 4.2 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 3.4 Pulsed Drain Current @ VGS=10V (Note 3) IDM 72* Avalanche Current (Note 3) IAR 20 A Single Pulse Avalanche Energy @ L=0.1mH, ID=20 Amps, VDD=50V (Note 2) EAS 20 Repetitive Avalanche Energy (Note 3) EAR 4.2 mJ TC=25°C (Note 1) 42 TC=100°C (Note 1) PD 21 TA=25°C (Note 2) 2.1 Power Dissipation TA=70°C (Note 2) PDSM 1.4 W Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL 300 Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG 260 Operating Junction and Storage Temperature Tj, Tstg -55~+175 *Drain current limited by maximum junction temperature

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 3/ 8 MTE55N10FP CYStek Product Specification Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 3.6 °C/W Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 58 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 100 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 0.1 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 16 - S VDS =5V , ID=18A IGSS - - ±100 nA VGS=±30V IDSS - - 1 VDS =80V , VGS =0V IDSS - - 10 μA VDS =80V , VGS =0V , Tj=125°C - 55.4 72 VGS =10V , ID=18A *RDS(ON) - 56.1 80 mΩ VGS =7V , ID=12A Dynamic *Qg - 11.2 - *Qgs - 2.4 - *Qgd - 4.8 - nC VDD=80V , ID=12A,VGS=10V *td(ON) - 8.4 - *tr - 15 - *td(OFF) - 19.6 - *tf - 9 - ns VDD=50V , ID=12A, VGS=10V , RG=6Ω Ciss - 453 - Coss - 76.3 - Crss - 33.7 - pF VGS=0V , VDS=30V , f=1MHz Source-Drain Diode *IS - - 18 *ISM - - 72 A *VSD - 0.89 1.3 V IS=18A, VGS=0V *trr - 30 - ns *Qrr - 45 - nC VGS=0V , IF=18A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 4/ 8 MTE55N10FP CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V 10V,9V,8V,7V,6V VDS, Drain-Source Voltage(V) ID, Drain Current (A) 4.5V V =4VGS Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=5V VGS=6V VGS=7V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=18A RDS( ON)@Tj=25°C : 55.4mΩtyp. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=18A

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 5/ 8 MTE55N10FP CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 048 1 2 1 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=80V ID=12A Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=175°C VGS=10V, θJC=3.6°C/W Single Pulse DC 100ms RDSON Limited 10μs 100μs 1ms 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=3.6°C/W

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 6/ 8 MTE55N10FP CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 1 2 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C θJC=3.6°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=3.6°C/W

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 7/ 8 MTE55N10FP CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C959FP Issued Date : 2014.11.25 Revised Date : Page No. : 8/ 8 MTE55N10FP CYStek Product Specification TO-220FP Dimension *Typical Inches Marking: A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Date Code Device Name E55 N10