MTE50N15Q8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Dynamic dv/dt rating
  • Repetitive Avalanche Rated
  • Pb-free & Halogen-free package Symbol Outline MTE50N15Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source

Ordering Information

(RoHS compliant & Halogen-free package) 2500 pcs / Tape & Reel MTE50N15Q8-0-T3-G Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 2/9 MTE50N15Q8 CYStek Product Specification Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 150 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C, VGS=10V 7.7 Continuous Drain Current @ TC=70°C, VGS=10V 6.1 Continuous Drain Current @ TA=25°C, VGS=10V 5.5 *1 Continuous Drain Current @ TA=70°C, VGS=10V ID 4.4 *1 Pulsed Drain Current IDM 50 *2 Avalanche Current IAS 20 TC=25 °C 4.5 Continuous Source Drain Diode Current TA=25 °C IS 2.6 *1 Avalanche Current IAS 20 A Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω EAS 20 mJ TC=25 °C 5.9 TC=70 °C 3.8 TA=25 °C 3.1 *1 Total Power Dissipation TA=70 °C PD 2.0 *1 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case Rth,j-c 21 Thermal Resistance, Junction-to-ambient Rth,j-a 40 *2 °C/W Note : *1. When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 80 °C/W at steady styate; 125°C/W when mounted on minimum pad. *2. Pulse width limited by maximum junction temperature. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V , ID=250μA ΔBVDSS/Tj - 133 - ID=250μA ΔVGS(th)/Tj - -9.6 - mV/°C ID=250μA VGS(th) 2.0 3.5 4.5 V VDS = VGS, ID=250μA GFS - 11 - S VDS =15V , ID=5A IGSS - - ±100 nA VGS=±30V - - 1 μA VDS =150V , VGS =0V IDSS - - 10 μA VDS =150V , VGS =0V , Tj=55°C - 39 46 mΩ VGS =10V , ID=5A *RDS(ON) - 40 48 mΩ VGS =8V , ID=5A

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 3/9 MTE50N15Q8 CYStek Product Specification Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Dynamic Qg(VGS=10V) *1, 2 - 30 45 Qgs *1, 2 - 7.8 - Qgd *1, 2 - 8.9 - nC VDS=75V ,ID=5A, VGS=10V Ciss - 1696 - Coss - 120 - Crss - 60 - pF VDS=50V , VGS=0V , f=1MHz td(ON) *1, 2 - 12 18 tr *1, 2 - 8 12 td(OFF) *1, 2 - 30 45 tf *1, 2 - 12 18 ns VDS=50V , ID=5A, VGS=10V , RG=1Ω td(ON) *1, 2 - 12 18 tr *1, 2 - 12 18 td(OFF) *1, 2 - 22 33 tf *1, 2 - 12 18 ns VDS=50V , ID=5A, VGS=8V , RG=1Ω Source-Drain Diode Ratings and Characteristics ISM *3 - - 50 A VSD *1 - 0.72 1.2 V IS=2.6A, VGS=0V trr - 80 - ns Qrr - 120 - nC ta - 56 - IF=5A, dIF/dt=100A/μs tb - 24 - ns Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 4/9 MTE50N15Q8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 0 V DS, Drain-Source Voltage(V) ID, Drain Current(A) 10V, 9V, 8V, 7V, 6V VGS=5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=7V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=5A RDS(ON)@Tj=25°C : 39 mΩ typ VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=5A

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 5/9 MTE50N15Q8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 4 8 1 21 62 02 42 83 2 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=5A VDS=50V VDS=75V VDS=100V Maximum Safe Operating Area 0.01 0.1 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limit TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID, Maximum Drain Current(A) TA=25°C, VGS=10V, RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 6/9 MTE50N15Q8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=40°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) ZθJC(t), Thermal Response Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 7/9 MTE50N15Q8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 8/9 MTE50N15Q8 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C931Q8 Issued Date : 2014.03.24 Revised Date : Page No. : 9/9 MTE50N15Q8 CYStek Product Specification SOP-8 Dimension Marking: c 0.170 0.250 0.006 0.010 θ 0 8° 0 8° D 4.700 5.100 0.185 0.200 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code E50 Device Name N15