MTE4D5N04H8 CYSTEKEC | Alldatasheet
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Features
Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and Halogen-free package Symbol Outline
Ordering Information
MTE4D5N04H8-0-T6-G DFN 5 ×6 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel DFN5×6 MTE4D5N04H8 G：Gate D：Drain S：Source BVDSS 40V ID@VGS=10V , TC=25°C 74A(silicon limit) ID@VGS=10V , TA=25°C 16.5A RDS(ON) @ VGS=10V , ID=30A 3.8mΩ(typ.) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name Pin 1 S S S G D D D D S S S G D D D D Pin 1
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 2/10 MTE4D5N04H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 40 V Gate-Source V oltage VGS ±20 Continuous Drain Current @ TC=25C, VGS=10V (silicon limit) ID A Continuous Drain Current @ TC=25C, VGS=10V (package limit) 60 Continuous Drain Current @ TC=100C, VGS=10V 46.8 Continuous Drain Current @ TA=25C, VGS=10V IDSM 16.5 *3 Continuous Drain Current @ TA=70C, VGS=10V 13.2 *3 Pulsed Drain Current IDM 296 *1, 2 Avalanche Current @ L=0.1mH IAS 60 Avalanche Energy @ L=1mH, ID=26A, VDD=15V EAS 338 mJ Total Power Dissipation TC=25℃ PD 50 W TC=100℃ 20 TA=25C PDSM 2.5 *3 TA=70C 1.6 *3 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C 100% UIS testing in conditions of VD=25V, L=0.1mH, VG=10V, IL=4.5A, Rated VDS=150V N-CH Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.5 C/W Thermal Resistance, Junction-to-ambient, max RθJA 50 *3 Note : 1.Pulse width limited by maximum junction temperature. 2.Duty cycle1%. 3.Surface mounted on 1in2 copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad. Characteristics (TC=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 40 - - V VGS=0V, ID=250μA VGS(th) 2 - 4 VDS = VGS, ID=250μA GFS *1 - 18 - S VDS =10V, ID=10A IGSS - - ±100 nA VGS=±20V , VDS=0V IDSS - - 1 μA VDS =32V , VGS =0V - - 5 VDS =32V , VGS =0V , Tj=55C RDS(ON) *1 - 3.8 5.8 mΩ VGS =10V, ID=30A Dynamic Ciss - 2582 3356 pF VDS=25V, VGS=0V , f=1MHz Coss - 261 339 Crss - 169 220
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 3/10 MTE4D5N04H8 CYStek Product Specification Qg *1, 2 - 52.2 - nC VDS=20V , VGS=10V , ID=30A Qgs *1, 2 - 15 - Qgd *1, 2 - 11.1 - ns VDD=20V , ID=30A, VGS=10V , RGS=3.5Ω tr *1, 2 - 11.4 - tf *1, 2 - 12 - Rg - 0.9 - Ω f=1MHz Source-Drain Diode IS *1 - - 40 A ISM *3 - - 160 VSD *1 - 0.83 1.2 V IS=30A, VGS=0V trr - 14.9 - ns IF=50A, dIF/dt=100A/μs Qrr - 10.2 - nC Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 4/10 MTE4D5N04H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 160 200 0 1 2 3 4 5 VDS, Drain-Source Voltage(V) ID, Drain Current(A) 10V,9V,8V,7V,6V VGS=4V 4.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 0 4 8 12 16 20 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=30A Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=10V, ID=30A RDS(ON)@Tj=25°C : 3.8 mΩ typ.
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 5/10 MTE4D5N04H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature( °C) VGS(th), NormalizedThreshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=5V Pulsed Ta=25°C Gate Charge Characteristics 0 10 20 30 40 50 60 Total Gate Charge---Qg(nC) VGS, Gate-Source Voltage(V) ID=30A VDS=30V VDS=20V Maximum Safe Operating Area 0.1 100 1000 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) ID, Drain Current(A) DC 10ms 100ms 1ms 100μs RDS(ON) Limited TC=25°C, Tj=150°C, VGS=10V, RθJC=2.5°C/W Single Pulse Maximum Drain Current vs Case Temperature 100 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=2.5°C/W Silicon Limit Package Limit
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 6/10 MTE4D5N04H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 120 140 160 180 200 0 1 2 3 4 5 6 VGS, Gate-Source Voltage(V) ID, Drain Current (A) VDS=10V Single Pulse Maximum Power Dissipation 500 1000 1500 2000 2500 3000 1E-04 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5 °C/W
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 7/10 MTE4D5N04H8 CYStek Product Specification Recommended Soldering Footprint & Stencil Design unit : mm
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 8/10 MTE4D5N04H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 9/10 MTE4D5N04H8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3C/second max. 3C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100C 150C 60-120 seconds 150C 200C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183C 60-150 seconds 217C 60-150 seconds Peak Temperature(TP) 240 +0/-5 C 260 +0/-5 C Time within 5C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6C/second max. 6C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.
CYStech Electronics Corp. Spec. No. : C018H8 Issued Date : 2018.11.15 Revised Date : Page No. : 10/10 MTE4D5N04H8 CYStek Product Specification DFN5×6 Dimension DIM Millimeters Inches DIM Millimeters Inches E 5.90 6.10 0.232 0.240 θ 8° 12° 8° 12° E1 5.70 5.80 0.224 0.228 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Marking: Date Code Device Name E4D5 N04 8-Lead DFN5×6 Plastic Package