MTE450P20E3 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline

Ordering Information

(Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton TO-220 MTE450P20E3 G：Gate D：Drain S：Source BVDSS -200V ID @ VGS=-10V , TC=25°C -9A ID @ VGS=-10V , TA=25°C -1.4A RDSON(TYP) @ VGS=-10V , ID=-3.9A 368mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS G D S compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 2/8 MTE450P20E3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS -200 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C, VGS=-10V (Note 5) -9 Continuous Drain Current @ TC=100°C, VGS=-10V (Note 5) ID -5.7 Pulsed Drain Current (Note 3) IDM -30 Continuous Drain Current @ TA=25°C (Note 2) -1.4 Continuous Drain Current @ TA=70°C (Note 2) IDSM -1.1 Avalanche Current @L=0.1mH (Note 3) IAS -27 A Avalanche Energy @ L=2mH, ID=-15A, VDS=-30V (Note 4) EAS 225 mJ TC=25°C (Note 1) 83 Power Dissipation TC=100°C (Note 1) PD 33 TA=25°C (Note 2) 2 Power Dissipation TA=70°C (Note 2) PDSM 1.3 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 1.5 Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1) 15 Thermal Resistance, Junction-to-ambient, max (Note 1) RθJA 62 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. 100% tested by conditions of L=2mH, IAS=-6A, VGS=-10V , VDD=-50V 5. Calculated continuous drain current based on maximum allowable junction temperature. 6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 3/8 MTE450P20E3 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -200 - - VGS=0V , ID=-250μA VGS(th) -2 - -4 V VDS = VGS, ID=-250μA GFS - 9.2 - S VDS =-10V , ID=-5A IGSS - - ±100 nA VGS=±20V , VDS=0V - - -1 VDS =-160V , VGS =0V IDSS - - -10 μA VDS =-160V , VGS =0V , Tj=125°C *RDS(ON) - 368 520 mΩ VGS =-10V , ID=-3.9A Dynamic *Qg - 29.3 - *Qgs - 7.1 - *Qgd - 9.9 - nC ID=-6.5A, VDS=-160V , VGS=-10V *td(ON) - 18 - *tr - 29.6 - *td(OFF) - 52.4 - *tf - 81.4 - ns VDS=-100V , ID=-6.5A, VGS=-10V , RG=12Ω Ciss - 1351 - Coss - 82 - Crss - 37 - pF VGS=0V , VDS=-25V , f=1MHz Source-Drain Diode *IS - - -9 *IS - - -30 A *VSD - -0.92 -1.2 V IS=-6.5A, VGS=0V *trr - 75.5 - ns *Qrr - 236 - nC IF=-6.5A, VGS=0V , dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 4/8 MTE450P20E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0123456789 1 0 DS, Drain-Source Voltage(V) -ID, Drain Current(A) -10V -9V -8V -7V -6.5V -6V -5.5V VGS=-4V -5V -4.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-6V -7V -10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 0 1 2 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 300 400 500 600 700 800 900 1000 02468 1 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) VDS=-10V, ID=-3.9A, RDS(ON)@Tj=25°C : 368mΩ typ. ID=-3A ID=-3.9A

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 5/8 MTE450P20E3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 1 02 03 04 05 06 07 08 09 0 1 0 0 -VDS, Drain-Source Voltage(V) Capacitance(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold VoltageID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=-15V VDS=-10V Gate Charge Characteristics 0 5 10 15 20 25 30 Total Gate Charge---Qg(nC) -VGS, Gate-Source Voltage(V) ID=-6.5A VDS=-160V VDS=-100V VDS=-40V Maximum Safe Operating Area 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100ms 1ms 100μs 10μs RDS( ON) Limited TC=25°C, Tj=150°C, VGS=-10V,RθJC=1.5°C/W single pulse Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) -ID, Maximum Drain Current(A)VGS=10V, RθJC=1.5°C/W

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 6/8 MTE450P20E3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0123456789 1 0 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) VDS=-10V Single Pulse Maximum Power Dissipation 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TC=25°C RθJC=1.5°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5 °C/W

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 7/8 MTE450P20E3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C897E3 Issued Date : 2017.03.27 Revised Date : 2017.04.05 Page No. : 8/8 MTE450P20E3 CYStek Product Specification TO-220 Dimension *: Typical Millimeters Inches Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 E450 P20 □□□□ Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.