MTE30N15E3 CYSTEKEC | Alldatasheet

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CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 1/ 8 MTE30N15E3 CYStek Product Specification N-Channel Enhancement Mode Power MOSFET MTE30N15E3 BVDSS 150V 47A ID@VGS=10V , TC=25°C ID@VGS=10V , TA=25°C 5.3A RDS(ON)@VGS=10V , ID=25A 23.8 mΩ(typ)Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline

Ordering Information

(RoHS compliant) 50 pcs/tube, 20 tubes/box, 4 boxes / carton TO-220 MTE30N15E3 G D S G：Gate D：Drain S：Source Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 2/ 8 MTE30N15E3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage (Note 1) VDS 150 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TC=25°C, VGS=10V (Note 5) 47 Continuous Drain Current @TC=100°C, VGS=10V (Note 5) ID 33 Continuous Drain Current @TA=25°C, VGS=10V (Note 2) 5.3 Continuous Drain Current @TA=70°C, VGS=10V (Note 2) IDSM 4.2 Pulsed Drain Current IDM 174 Single Pulse Avalanche Current @ L=0.1mH IAS 20 A Single Pulse Avalanche Energy @ L=1mH, ID=20 Amps, VDD=50V (Note 4) EAS 200 Repetitive Avalanche Energy (Note 3) EAR 18 mJ TC=25°C (Note 1) 180 TC=100°C (Note 1) PD 90 TA=25°C (Note 2) 2.1 Power Dissipation TA=70°C (Note 2) PDSM 1.3 W Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL 300 Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG 260 Operating Junction and Storage Temperature Tj, Tstg -55~+175 *Drain current limited by maximum junction temperature Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 0.83 Thermal Resistance, Junction-to-ambient, max (Note 2) RθJA 60 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. 4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of VDD=50V, ID=10A, L=0.1mH, VGS=10V. 5. Calculated continuous drain current based on maximum allowable junction temperature. 6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 3/ 8 MTE30N15E3 CYStek Product Specification Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V , ID=250μA ∆BVDSS/∆Tj - 160 - mV/°C Reference to 25°C, ID=250μA VGS(th) 2 - 4 V VDS = VGS, ID=250μA *GFS - 27 - S VDS =10V , ID=20A IGSS - - ±100 nA VGS=±20V - - 1 VDS =120V , VGS =0V IDSS - - 5 μA VDS =120V , VGS =0V , Tj=55°C *RDS(ON) - 23.8 30 mΩ VGS =10V , ID=25A Dynamic *Qg - 43.3 - *Qgs - 13 - *Qgd - 18.2 - nC VDS=120V , VGS=10V , ID=45A *td(ON) - 25 - *tr - 22.6 - *td(OFF) - 38 - *tf - 11.8 - ns VDS=75V , ID=45A, VGS=10V , RGS=1Ω Ciss - 1997 - Coss - 242 - Crss - 85 - pF VGS=0V , VDS=25V , f=1MHz Rg - 2.6 - Ω f=1MHz Source-Drain Diode *IS - - 47 *ISM - - 174 A *VSD - 0.83 1.2 V IS=25A, VGS=0V *trr - 57 - ns *Qrr - 166 - nC VGS=0V , IF=45A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 4/ 8 MTE30N15E3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 100 0 3 6 9 12 15 18 21 24 27 30 VDS, Drain-Source Voltage(V) ID, Drain Current (A) 10V, 9V, 8V VGS=6V 6.5V Brekdown Voltage vs Junction Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=7V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=7V, ID=15A RDSON @ Tj=25°C : 25.5 mΩ typ VGS=10V, ID=25A RDSON @ Tj=25°C : 23.8mΩ typ VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=20A

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 5/ 8 MTE30N15E3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 45 50 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=45A VDS=120V VDS=30V VDS=75V Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj(max)=175°C VGS=10V, RθJC=0.83°C/W Single Pulse DC 100ms RDSON Limited 10μs 1ms 100μs 10ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=0.83°C/W

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 6/ 8 MTE30N15E3 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 100 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 300 600 900 1200 1500 1800 2100 2400 2700 3000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C RθJC=0.83°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.83 °C/W 0.01

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 7/ 8 MTE30N15E3 CYStek Product Specification Recommended wave soldering condition Soldering Time Product Peak Temperature Pb-free devices 5 +1/-1 seconds 260 +0/-5 °C Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C129E3 Issued Date : 2016.02.19 Revised Date : Page No. : 8/ 8 MTE30N15E3 CYStek Product Specification TO-220 Dimension *: Typical Millimeters Inches Millimeters Inches DIM Marking: Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Device Name Date Code 1 2 3 E30 N15 □□□□