MTE2D4N06E3 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=130A,RDS(ON)<3.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 130 A Continuous Drain Current-TC=100℃ --- Pulsed Drain Current2 390 EAS Single Pulse Avalanche Energy5 80 mJ PD Power Dissipation3 140 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.89 ℃/W RƟJA Thermal Resistance Junction to mbient4 62 ℃/W D S G M TE2D4N06E3 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 3 3.5 mΩ VGS=4.5V,ID=10A --- 3.5 4.5 Dynamic Characteristics4 Ciss Input Capacitance VDS=25V, VGS=0V, f=100KHz --- 5377 --- pF Coss Output Capacitance --- 1666 --- Crss Reverse Transfer Capacitance --- 77.7 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=30V,ID=25A,RG=2Ω VGS=10V --- 22.5 --- ns tr Rise Time --- 6.7 --- ns td(off) Turn-Off Delay Time --- 80.3 --- ns tf Fall Time --- 26.8 --- ns Qg Total Gate Charge VGS=10V, VDS=30V, ID=25A --- 66.1 --- nC Qgs Gate-Source Charge --- 10.7 --- nC Qgd Gate-Drain “Miller” Charge --- 10.9 --- nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V M TE2D4N06E3 All d ata sheet.com
www.doingter.cn — 3 — LS Continuous Source Current VGS\\<Vth --- --- 130 A LSp Pulsed Source Current --- --- 390 Trr Reverse Recovery Time --- 68.3 --- NS Qrr Reverse Recovery Charge --- 73 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) IS=25 A, di/dt=100 A/μs 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃. M TE2D4N06E3 All d ata sheet.com
www.doingter.cn — 4 — M TE2D4N06E3 0086-0755-8278-9056 All d ata sheet.com