MTE2D0N04E3 DOINGTER | Alldatasheet
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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=230A,RDS(ON) < mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -1 230 A Continuous Drain Current -TC=100℃ 162 Pulsed Drain Current 2 800 EAS Single Pulse Avalanche Energy 3 1.5 mJ PD Power Dissipation 4 285 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 0.52 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 62.5 D S G MTE2D0N04E3 All d ata sheet.com
www.doingter .cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=32V --- --- 1 μA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3 4 V RDS(ON) Drain -Source On Resistance2 VGS=10V,ID=60A --- 2.3 4 mΩ VGS=4.5V,ID=A --- --- --- GFS Forward Transconductance VDS=0V, ID=0A --- --- --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 7000 --- pF Coss Output Capacitance --- 1850 --- Crss Reverse Transfer Capacitance --- 675 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=60A, RGEN=6Ω.VGS=10V --- 35 --- ns tr Ris e Time --- 20 --- ns td(off) Turn-Off Delay Time --- 45 --- ns tf Fall Time --- 62 --- ns Qg Total Gate Charge VGS=10V, VDS=32V, ID=60A --- 190 --- nC Qgs Gate -Source Charge --- 30 --- nC Qgd Gate -Drain “Miller” Charge --- 80 --- nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage2 VGS=0V,IS=60A --- --- 1.3 V MTE2D0N04E3 All d ata sheet.com
www.doingter .cn — 3 — Ls Diode Forward Current (Note 2) --- --- --- 25 A Trr Reverse Recovery Time --- 37 --- NS Qrr Reverse Recovery Charge --- 62 --- NC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) IF=60A, dI/dt=100A/us : Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 55A. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25°C,L = 1mH MTE2D0N04E3 All d ata sheet.com
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