MTE150P20H8 CYSTEKEC | Alldatasheet

Document overview

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Technical content

Features

  • Single Drive Requirement
  • Low On-resistance
  • Fast Switching Characteristic
  • Dynamic dv/dt rating
  • Pb-free lead plating and Halogen-free package Symbol Outline MTE150P20H8 EDFN5×6 Pin 1 G：Gate D：Drain S：Source

Ordering Information

DFN5×6 MTE150P20H8-0-T6-G (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 2/10 MTE150P20H8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol 10s Steady State Unit Drain-Source V oltage VDS -200 Gate-Source V oltage VGS ±20 V Continuous Drain Current @ TC=25°C, VGS=-10V (Note1) -15 Continuous Drain Current @ TC=100°C, VGS=-10V (Note1) ID -10.6 Continuous Drain Current @ TA=25°C, VGS=-10V (Note2) -3.8 -2.3 Continuous Drain Current @ TA=70°C, VGS=-10V (Note2) IDSM -3.0 -1.8 Pulsed Drain Current (Note3) IDM -30 *1,2 Avalanche Current IAS -30 A Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-50V EAS 45 mJ TC=25℃ (Note1) 100 TC=100℃ (Note1) PD 50 TA=25°C (Note2) 5.4 1.9 Total Power Dissipation TA=70°C (Note2) PDSM 3.4 1.2 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-case Rth,j-c 1 1.5 °C/W t≤10s 18 23 Thermal Resistance, Junction-to-ambient (Note2) Steady State Rth,j-a 50 65 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -200 - - V VGS=0V , ID=-250μA VGS(th) -2.0 - -4.0 V VDS = VGS, ID=-250μA GFS *1 - 12.9 - S VDS =-15V , ID=-3.8A IGSS - - ±100 nA VGS=±20V - - -1 VDS =-200V , VGS =0V IDSS - - -10 μA VDS =-200V , VGS =0, Tj=70°C - 137 174 mΩ VGS =-10V , ID=-3.8A RDS(ON) *1 - 142 180 mΩ VGS =-6V , ID=-3.6A

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 3/10 MTE150P20H8 CYStek Product Specification Dynamic *4 Ciss - 2954 - Coss - 189 - Crss - 85 - pF VDS=-30V , VGS=0V , f=1MHz Qg *1, 2 - 56 - Qgs *1, 2 - 11 - Qgd *1, 2 - 15 - nC VDS=-75V , VGS=-10V , ID=-5.2A tr *1, 2 - 28 - td(OFF) *1, 2 - 86 - tf *1, 2 - 55 - ns VDS=-75V , ID=-4.8A, VGS=-10V , RG=6Ω Rg - 4 - Ω f=1MHz Source-Drain Diode IS *1 - - -2.3 ISM *3 - - -30 A VSD *1 - -0.76 -1 V IS=-4.2A, VGS=0V trr - 53 - ns Qrr - 131 - nC IF=-2.9A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. *4.Guaranteed by design, not subject to production testing. Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 4/10 MTE150P20H8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 02468 1 Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) 10V 4.5V -VGS=4V -V =3.5VGS Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ)VGS=-4.5V VGS=-6V VGS=-10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 -IDR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-3.8A RDS(ON)@ Tj=25°C : 137mΩ (typ.) -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) ID=-3.8A

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 5/10 MTE150P20H8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10.0 100.0 1000.0 10000.0 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Maximum Safe Operating Area 0.001 0.01 0.1 100 0.01 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs RDSON Limited TA=25°C, VGS=-10V,Tj=150°C RθJA=65°C/W, Single Pulse Gate Charge Characteristics 0 1 02 03 04 05 06 0 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-75V ID=-5.2A Maximum Drain Current vs Junction Temperature 0.5 1.5 2.5 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A)TA=25°C, VGS=-10V, RθJA=65°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-15V Pulsed Ta=25°C

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 6/10 MTE150P20H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Single Pulse Maximum Power Dissipation 100 150 200 250 300 350 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C θJA=65°C/W Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 200 T C, Case Temperature(°C) -ID, Maximum Drain Current(A)VGS=-10V, RθJC=1.5°C/W Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) DC 10ms 100ms 1ms 100μs RDSON Limited TC=25°C, VGS=-10V,Tj=175°C RθJC=1.5°C/W, Single Pulse Single Pulse Maximum Power Dissipation 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C θJC=1.5°C/W Power Derating Curve 100 120 0 25 50 75 100 125 150 175 200 T C, Case Temperature(℃) PD, Power Dissipation(W)

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 7/10 MTE150P20H8 CYStek Product Specification Typical Characteristics(Cont.) Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=65°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.5 °C/W

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 8/10 MTE150P20H8 CYStek Product Specification Reel Dimension Carrier Tape Dimension Pin #1

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 9/10 MTE150P20H8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds Time maintained above: −Temperature (TL) 217°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25 °C to peak temperature Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C992H8 Issued Date : 2014.12.27 Revised Date : Page No. : 10/10 MTE150P20H8 CYStek Product Specification DFN5×6 Dimension Millimeters Inches Millimeters Inches Marking : 8-Lead DFN5×6 Plastic Package Device Name E150 P20 Date Code 0.047 0.055 D2 4.824 4.976 0.190 0.196 θ 10° 12° 10° 12° E2 5.674 5.826 0.223 0.229 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.