MTE110P10KQ8 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 MTE110P10KQ8 CYStek Product Specification P-Channel Enhancement Mode Power MOSFET MTE110P10KQ8 BVDSS -100V ID@VGS=-10V , TA=25°C -3.7A RDSON@VGS=-10V , ID=-2A 97mΩ(typ) Features RDSON@VGS=-6V , ID=-2A 113mΩ(typ)

  • Simple drive requirement • Low on-resistance
  • Fast switching speed
  • ESD protected gate
  • Pb-free and Halogen-free package Equivalent Circuit Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / tape & reel MTE110P10KQ8 SOP-8 G：Gate S：Source D：Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 2/9 MTE110P10KQ8 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Breakdown V oltage BVDSS -100 Gate-Source V oltage VGS ±20 V Continuous Drain Current @TA=25 °C , VGS=-10V -3.7 Continuous Drain Current @TA=70 °C , VGS=-10V ID -3.0 Pulsed Drain Current (Note 1) IDM -20 Single Pulse Avalanche Current IAS -3.7 A Single Pulse Avalanche Energy @ L=5mH, IAS=-3.7A, VDD=-25V EAS 34 mJ TA=25 °C 3.1 Power Dissipation (Note 2) TA=70 °C PD 2.0 W Operating Junction and Storage Temperature Range Tj ; Tstg -55~+150 °C Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Thermal Resistance Ratings Thermal Resistance Symbol Maximum Unit Junction-to-Case RθJC 5 Junction-to-Ambient (Note) RθJA 40 °C / W Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -100 - - VGS=0V , ID=-250μA VGS(th) -2.0 - -4.0 V VDS=-10V , ID=-1mA IGSS - - ±10 VGS=±20V , VDS=0V - - -1 VDS=-80V , VGS=0V IDSS - - -25 μA VDS=-80V , VGS=0V , Tj=85°C - 97 126 ID=-2A, VGS=-10V RDS(ON) (Note 1) - 113 150 mΩ ID=-2A, VGS=-6V GFS (Note 1) - 5.8 - S VDS=-10V , ID=-2A Dynamic Ciss - 976 - Coss - 124 - Crss - 48 - pF VDS=-20V , VGS=0V , f=1MHz td(ON) (Note 1&2) - 11 - tr (Note 1&2) - 17.2 - td(OFF) (Note 1&2) - 52.8 - tf (Note 1&2) - 47.8 - ns VDS=-50V , ID=-1A, VGS=-10V , RG=6Ω

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 3/9 MTE110P10KQ8 CYStek Product Specification Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Qg (Note 1&2) - 18.7 - Qgs (Note 1&2) - 4.5 - Qgd (Note 1&2) - 5.5 - nC VDS=-80V , ID=-3.7A, VGS=-10V Source-Drain Diode IS - - -3.7 ISM(Note 3) - - -20 A VSD(Note 1) - -0.75 -1.2 V IS=-2A, VGS=0V trr - 23 - ns Qrr - 27 - nC IF=-2A, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Recommended Soldering Footprint

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 4/9 MTE110P10KQ8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0.0 4.0 8.0 12.0 16.0 20.0 02468 1 Normalized Brekdown Voltage vs Ambient Temperature 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V -10V, -9V,-8V,-7V -VDS, Drain-Source Voltage(V) -ID, Drain Current (A) -6V -5V VGS=-4.5V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.1 1 10 100 -ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=-10V VGS=-6V VGS=-4.5V Source Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 048 1 2 1 6 2 -IS, Source Drain Current(A) -VSD, Source-Drain Voltage(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 150 200 250 300 350 400 450 500 02468 1 0 VGS=0V Tj=25°C Tj=150°C Normalized Drain-Source On-State Resistance vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=-10V, ID=-2A RDS(ON)@Tj=25°C : 97mΩ typ. -VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=-2A

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 5/9 MTE110P10KQ8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Normalized Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold Voltage ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) VDS=-10V Pulsed TA=25°C Gate Charge Characteristics 0 4 8 12 16 20 Qg, Total Gate Charge(nC) -VGS, Gate-Source Voltage(V) VDS=-80V ID=-3.7A VDS=-50V VDS=-20V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100ms 1ms 100μs TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse Maximum Drain Current vs Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 6/9 MTE110P10KQ8 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width(s) Power (W) TJ(MAX)=150°C TA=25°C RθJA=40°C/W Typical Transfer Characteristics 0.0 4.0 8.0 12.0 16.0 20.0 02468 GS, Gate-Source Voltage(V) -ID, Drain Current(A) VDS=-10V Transient Thermal Response Curves 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) r(t), Normalized Transient Thermal ResistanceSingle Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 7/9 MTE110P10KQ8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 8/9 MTE110P10KQ8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 9/9 MTE110P10KQ8 CYStek Product Specification SOP-8 Dimension Marking: *: Typical Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Date Code E110 P10K □□□□ Device Name