MTE09N06FP CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • Low Gate Charge
  • Simple Drive Requirement
  • Repetitive Avalanche Rated
  • Fast Switching Characteristic
  • RoHS compliant package Symbol Outline

Ordering Information

MTE09N06FP-0-UB-S TO-220FP (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton TO-220FP MTE09N06FP G：Gate D：Drain S：Source BVDSS 60V ID @ VGS=10V , TC=25°C 52A RDSON(TYP) @ VGS=10V , ID=30A 7.4mΩ RDSON(TYP) @ VGS=7V , ID=20A 8.1mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products G D S Product name

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 2/8 MTE09N06FP CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source V oltage VDS 60 Gate-Source V oltage VGS ±30 V Continuous Drain Current @ TC=25°C, VGS=10V 52 Continuous Drain Current @ TC=100°C, VGS=10V ID 36.8 Pulsed Drain Current (Note 4) IDM 208 Continuous Drain Current @ TA=25°C (Note 2) 11 Continuous Drain Current @ TA=70°C (Note 2) IDSM 8.8 Avalanche Current (Note 5) IAS 30 A Avalanche Energy @ L=1mH, ID=20A, RG=25Ω (Note 5) EAS 200 Repetitive Avalanche Energy@ L=0.1mH (Note 3) EAR 6 mJ TC=25°C (Note 1) 62.5 Power Dissipation TC=100°C (Note 1) PD 31.3 TA=25°C (Note 2) 2 Power Dissipation TA=70°C (Note 2) PDSM 1.3 W Operating Junction and Storage Temperature Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.4 Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 1) 15 Thermal Resistance, Junction-to-ambient, max (Note 1) Rth,j-a 62.5 °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. Pulse width ≤300μs pulses and duty cycle ≤0.5%. 5. Pulse width limited by junction temperature. 6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 3/8 MTE09N06FP CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 60 - - VGS=0V , ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA GFS - 30 - S VDS =5V , ID=20A IGSS - - ±100 nA VGS=±30V - - 1 VDS =60V , VGS =0V IDSS - - 10 μA VDS =48V , VGS =0V , Tj=55°C - 7.4 10.6 VGS =10V , ID=30A *RDS(ON) - 8.1 13.5 mΩ VGS =7V , ID=20A Dynamic *Qg - 34.8 - *Qgs - 6.3 - *Qgd - 16.7 - nC ID=30A, VDS=48V , VGS=10V *td(ON) - 16 - *tr - 21.6 - *td(OFF) - 38.2 - *tf - 14.2 - ns VDS=30V , ID=30A, VGS=10V , RG=2.7Ω Ciss - 1429 - Coss - 265 - Crss - 129 - pF VGS=0V , VDS=30V , f=1MHz Source-Drain Diode *IS - - 52 A *VSD - 0.86 1.2 V IS=30A, VGS=0V *trr - 18.3 - ns *Qrr - 13.6 - nC IF=30A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 4/8 MTE09N06FP CYStek Product Specification Typical Characteristics Typical Output Characteristics 120 150 180 012345 V DS, Drain-Source Voltage(V) ID, Drain Current (A) 10V,9V,8V VGS=4.5V VGS=5V VGS=6V VGS=7V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=10V VGS=7V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 IDR, Reverse Drain Current(A) VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 120 160 200 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) RDS(on), Normalized Static Drain- Source On-State Resistance VGS=10V, ID=30A RDS(ON)@Tj=25°C : 7.4mΩ typ. VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(mΩ) ID=30A

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 5/8 MTE09N06FP CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=5V Gate Charge Characteristics 0 5 10 15 20 25 30 35 40 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) VDS=48V ID=30A Maximum Safe Operating Area 0.1 100 1000 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A) TC=25°C, Tj=175°C VGS=10V, RθJC=2.4°C/W Single Pulse DC 10ms RDSON Limited 10μs 100μs 1ms Maximum Drain Current vs Case Temperature 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A)VGS=10V, RθJC=2.4°C/W

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 6/8 MTE09N06FP CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 120 150 180 02468 1 0 V GS, Gate-Source Voltage(V) ID, Drain Current(A) VDS=10V Single Pulse Power Rating, Junction to Case 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) Power (W) TJ(MAX)=175°C TC=25°C RθJC=2.4°C/W Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.4°C/W

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 7/8 MTE09N06FP CYStek Product Specification Recommended wave soldering condition Peak Temperature Soldering Time Product Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak 10-30 seconds 20-40 seconds temperature(tp) Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C912FP Issued Date : 2015.05.19 Revised Date : 2015.06.29 Page No. : 8/8 MTE09N06FP CYStek Product Specification TO-220FP Dimension *Typical Inches Millimeters Inches Millimeters Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Marking: Date Code Device Name E09 N06 □□□□ DIM A1 0.051 REF 1.300 REF H 0.138 REF 3.50 REF e 0.100 * 2.54* N 0.012 REF 0.30 REF F 0.106 REF 2.70 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.